Soitec

Frec'n'sys

Tokyo Electron Limited

Centre National De La Recherche Scientifique

Thales

Université De Lille

Ecole Centrale De Lille

Université Polytechnique Hauts-de-france

Yncrea Hauts De France Isen Lille

Soitec Sa

Yncrea Hauts-de-france Etablissement Isen Lille

Sasu Frec'n'sys

Thierry LaRoche

Sylvain Ballandras

Julien Garcia

Emilie Courjon

Florent Bernard

Eric Michoulier

Tomohide Minami

Kimihiro Matsuse

Bertrand Dubus

Alexandre Raveski

William Daniau

Anne-Christine Hladky-Hennion

Jacques Berg

Claude Prévot

Thi Mai Pham Colomban

Marianne Sagnard

Paolo Martins

Charles Croenne

Anne-Christine Hladky- Hennion

An acoustic wave sensor device comprises a quartz material layer surface; arranged along a first axis, a first interdigitated transducer disposed over the planar surface of the quartz material layer, a first reflection structure disposed over the planar surface of the quartz material layer, and a second reflection structure disposed over the planar surface of the quartz material layer; and arranged along a second axis, a second interdigitated transducer disposed over the planar surface of the quartz material layer, a third reflection structure disposed over the planar surface of the quartz material layer, and a fourth reflection structure disposed over the planar surface of the quartz material layer; and wherein the first axis and the second axis are inclined to each other by a finite angle.

Two-port acoustic wave sensor device

An acoustic wave sensor device, comprising an interdigitated transducer; a first reflection structure arranged on one side of the interdigitated transducer, and a second reflection structure arranged on another side of the interdigitated transducer; a first resonance cavity comprising a first upper surface and formed between the interdigitated transducer and the first reflection structure; a second resonance cavity comprising a second upper surface and formed between the interdigitated transducer and the second reflection structure; and wherein the second upper surface comprises a physical and/or chemical modification as compared to the first upper surface.

Differential acoustic wave sensors

A coupled cavity filter structure that uses a surface acoustic wave, in particular, a guided surface acoustic wave, comprises an acoustic wave propagating substrate, at least one input transducer structure and one output transducer structure, provided over the substrate, each comprising inter-digitated comb electrodes, at least one reflecting structure comprising at least one or more metallic strips positioned at a distance and in between the input and output transducer structures, in the direction of propagation of an acoustic wave. The acoustic wave propagating substrate is a composite substrate comprising a base substrate and a piezoelectric layer. In additional embodiments, a coupled cavity filter structure comprises a groove. In additional embodiments, a SAW ladder filter device comprises at least two coupled cavity filter structures as described herein, wherein the at least two coupled cavity filter structures are positioned on a single line.

Resonant cavity surface acoustic wave (SAW) filters

A surface acoustic wave tag device is disclosed, comprising: an acoustic wave propagating substrate, at least one transducer structure comprising inter-digitated comb electrodes, and at least one reflecting means, the reflecting means comprising at least one reflector, wherein the acoustic wave propagation substrate is a composite substrate comprising a base substrate and a piezoelectric layer, wherein the crystallographic orientation of the piezoelectric layer with respect to the base substrate is such that the propagation of a shear wave inside the piezoelectric layer and in the direction of propagation corresponding to the acoustic wave is enabled. A physical quantity determining device and a fabrication method of such surface acoustic wave tag device are also disclosed.

Composite substrates for saw tags or RFID and sensors applications

A surface acoustic wave device comprising a base substrate, a piezoelectric layer and an electrode layer in between the piezoelectric layer and the base substrate, a comb electrode formed on the piezoelectric layer comprising a plurality of electrode means with a pitch p, defined asp=A, with A being the wavelength of the standing acoustic wave generated by applying opposite potentials to the electrode layer and comb electrode, wherein the piezoelectric layer comprises at least one region located in between the electrode means, in which at least one physical parameter is different compared to the region underneath the electrode means or fingers. A method of fabrication for such surface acoustic wave device is also disclosed. The physical parameter may be thickness, elasticity, doping concentration of Ti or number of protons obtained by proton exchange.

Surface acoustic wave device on composite substrate

A surface elastic wave filter has resonant cavities and comprises a composite substrate formed of a base substrate and a piezoelectric upper layer; at least one input electroacoustic transducer and an output electroacoustic transducer, arranged on the upper layer, and at least one internal reflecting structure, arranged between the input electroacoustic transducer and the output electroacoustic transducer. The internal reflecting structure comprises a first structure comprising at least one reflection grating having a first period and a second structure comprising at least one reflection grating having a second period, the first period being greater than the second period.

Surface elastic wave filter with resonant cavities

A method of interrogating an acoustic wave sensor comprises transmitting, by an interrogator, an interrogation radiofrequency signal to the acoustic wave sensor by way of a transmission antenna, receiving, by the interrogator, a response radiofrequency signal from the acoustic wave sensor by way of a reception antenna, and processing by a processing means of the interrogator the received response radiofrequency signal to obtain in-phase and quadrature components both in the time domain and the frequency domain, determining by the processing means perturbations of the obtained in-phase and quadrature components both in the time domain and the frequency domain and determining by the processing means a value of a measurand based on the detected perturbations.

Acoustic wave sensor and interrogation of the same

Surface acoustic wave device on device on composite substrate

A surface acoustic wave device includes at least one transducer; two acoustic reflectors disposed on either side of the at least one transducer so as to form a cavity, each acoustic reflector comprising an array of electrodes in the form of lines parallel with each other, each array comprising a subset of electrodes connected to a reference potential denoted mass defining a first connection type, and a subset of electrodes that are not connected to any potential, i.e. that have a floating connection defining a second connection type; at least one switching circuit configured to modify the distribution of the connections of at least one part of the electrodes of each array between the different connection types.

Surface acoustic wave device

An acoustic wave pressure sensor device configured to measure a pressure, comprising a substrate configured to bend when pressure is applied to the substrate such that an area of a first kind of strain and an area of a second kind of strain are formed in the substrate; an interdigitated transducer formed over the substrate; a first Bragg mirror formed over the substrate and arranged on one side of the interdigitated transducer; a second Bragg mirror formed over the substrate and arranged on another side of the interdigitated transducer; a first resonance cavity formed between the interdigitated transducer and the first Bragg mirror; a second resonance cavity formed between the interdigitated transducer and the second Bragg mirror; and wherein the first resonance cavity is formed over the area of the first kind of strain and the second resonance cavity is formed over the area of the second kind of strain.

Differential acoustic wave pressure sensor with improved signal-to-noise ratio

An electrical device adapted to operate at a high operating ambient temperature includes an electrical component mounted inside a casing, a transmission/reception antenna and at least one electrical and mechanical connection between the electrical component and the antenna. The electrical and mechanical connection comprises a metal pad positioned under the casing, the antenna being connected to the pad; an electrical connection tab having a first end connected to the electrical component; and fixing means adapted to secure the pad and a second end of the connection tab of the component. The device is applicable to, for example, temperature sensors of the surface guided elastic wave type.

Antenna connection, particularly for surface guided elastic wave transducers

An apparatus and method for real-time sensing of properties in industrial manufacturing equipment are described. The sensing system includes first plural sensors mounted within a processing environment of a semiconductor device manufacturing system, wherein each sensor is assigned to a different region to monitor a physical or chemical property of the assigned region of the manufacturing system, and a reader system having componentry configured to simultaneously and wirelessly interrogate the plural sensors. The reader system uses a single high frequency interrogation sequence that includes (1) transmitting a first request pulse signal to the first plural sensors, the first request pulse signal being associated with a first frequency band, and (2) receiving uniquely identifiable response signals from the first plural sensors that provide real-time monitoring of variations in the physical or chemical property at each assigned region of the system.

Growing community of inventors

Besançon, France

Thierry LaRoche