Commissariat a L'energie Atomique Et Aux Energies Alternatives

Université Grenoble Alpes

Thierry Farjot

Fabrice Nemouchi

François Lefloch

Tom Doekle Vethaak

Frédéric Gustavo

A method for producing a superconducting vanadium silicide on a silicon layer includes treating a face of the silicon layer in order to prepare it for a deposition of vanadium silicide, then depositing a vanadium silicide layer on the prepared face of the silicon layer in order to obtain a stack of a vanadium silicide layer directly deposited on the silicon layer, then an annealing the stack which increases the critical temperature of the vanadium silicide deposited. The treating includes an operation of incorporation of argon atoms in the silicon layer through the face of the silicon layer.

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Grenoble, France

Thierry Farjot