International Business Machines Corporation

Thierry Cantiant

Francis Bredin

Pierre Coppens

A memory system with adaptable redundancy comprises address decoding means (200) for the selection of one of the rows R.sub.1 to R.sub.2 (n+1) in the memory array, according to the binary value of address A.sub.0, A.sub.1, . . . A.sub.nn incoming on bus 102. Block 200 comprises 2.sup.(n+1) blocks 201 being able to drive an activation signal on leads R.sub.1 to R.sub.2 (n+1), and having an output connected to a lead 206. Block 205 is able to drive an activation signal on lead RR according to signals present on leads 107 and 206, so as to select redundant row RR.sub.1 without the use of a redundant address decoder.

Memory system with adaptable redundancy

A combined sense amplifier and latching circuit receives an input signal (VIN) at an input terminal (22). A sense amplifier includes a gated-loop type master latch (ML) having two cascaded inverters (I12, I13) with a common node (I) coupled therebetween and a control device (TG4) in the master latch loop controlled by a gating signal (55A). A reference voltage generator generates a reference voltage (VREF). The two inverters are biased between a first supply voltage (Vdd) having a magnitude greater than the reference voltage and either a second supply voltage (GND) or the reference voltage depending on the value of the gating signal. The input terminal is connected to the input of one of the inverters. A gated-loop slave latch (SL) is connected in series with the sense amplifier and includes two cascaded inverters (I14, I15) with a common node (M) coupled therebetween and a control device (P15) in the slave latch loop controlled by the gating signal. The sense amplifier and the slave latch are isolated from each other by a control device (TG5) controlled by the gating signal.

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Dammarie-Les-Lys, France

Thierry Cantiant