Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Applied Materials, Inc.

Centre National De La Recherche Scientifique

Thibaut David

Nicolas Posseme

Thorsten B Lill

Stefan Landis

Olivier Joubert

Sebastien Barnola

Lamia Nouri

Srinivas D Nemani

Laurent J Vallier

Sébastien Barnola

Stéphan Landis

Torsten Lill

A method for forming reliefs on the surface of a substrate, including a first implantation of ions in the substrate according to a first direction; a second implantation of ions in the substrate according to a second direction that is different from the first direction; at least one of the first and second implantations is carried out through at least one mask having at least one pattern; an etching of areas of the substrate having received by implantation a dose greater than or equal to a threshold, selectively to the areas of the substrate that have not received via implantation a dose greater than said threshold; the parameters of the first and second implantations being adjusted in such a way that only areas of the substrate that have been implanted both during the first implantation and during the second implantation receive a dose greater than or equal to said threshold.

Method for producing patterns by ion implantation

The invention relates in particular to a method for producing subsequent patterns in an underlying layer (), the method comprising at least one step of producing prior patterns in a carbon imprintable layer () on top of the underlying layer (), the production of the prior patterns involving nanoimprinting of the imprintable layer () and leave in place a continuous layer formed by the imprintable layer () and covering the underlying layer (), characterized in that it comprises the following step:

Method for obtaining patterns in a layer

A method is provided for forming spacers for a gate of a field effect transistor, the gate being situated above a layer of semiconductor material, including forming a layer of nitride covering the gate; modifying the layer by plasma implantation of light ions, having an atomic number equal or less than 10, in the layer in order to form a modified layer of nitride, the modifying being performed so as not to modify the layer of nitride over its entire thickness at flanks of the gate; and removing the modified layer of nitride by a selective wet or dry etching, of the modified layer relative to said layer of semiconductor material and relative to the non-modified layer at the flanks of the gate, without etching the layer of semiconductor material, wherein an entire length of the non-modified layer at the flanks remains after the selective wet or dry etching.

Method for forming spacers for a transistor gate

Embodiments of methods of forming silicon nitride spacers are provided herein. In some embodiments, a method of forming silicon nitride spacers atop a substrate includes: depositing a silicon nitride layer atop an exposed silicon containing layer and an at least partially formed gate stack disposed atop a substrate; modifying a portion of the silicon nitride layer by exposing the silicon nitride layer to a hydrogen or helium containing plasma that is substantially free of fluorine; and removing the modified portion of the silicon nitride layer by performing a wet cleaning process to form the silicon nitride spacers, wherein the wet cleaning process removes the modified portion of the silicon nitride layer selectively to the silicon containing layer.

Methods of forming silicon nitride spacers

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Goncelin, France

Thibaut David