Hitachi, Ltd.

Centre National De La Recherche Scientifique

Université Paris Sud Xi

Thibault Devolder

Riichiro Takemura

Takayuki Kawahara

Kenchi Ito

Hiromasa Takahashi

Claude Chappert

Paul Crozat

Joo-von Kim

A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.

Magnetic memory device

Growing community of inventors

Massy, France

Thibault Devolder