Soraa Laser Diode, Inc.

Kyocera Sld Laser, Inc.

Thiago P Melo

James W Raring

Melvin McLaurin

Mathew C Schmidt

Christiane Elsass

Po Shan Hsu

A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

Gallium and nitrogen containing laser device configured on a patterned substrate

Gallium nitride containing laser device configured on a patterned substrate

In an example, the present invention provides a method for fabricating a light emitting device configured as a Group III-nitride based laser device. The method also includes forming a gallium containing epitaxial material overlying the surface region of a substrate member. The method includes forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition. The method includes maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguide material is substantially a molecular Nrich gas environment. The method includes maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguide material, although there may be variations. In an example, the predetermined process condition is substantially free from molecular Hgas.

Epitaxial growth of cladding regions for a gallium and nitrogen containing laser diode

Methods for fabricating light emitting devices

Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode

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Fremont, CA, United States of America

Thiago P Melo