Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag

Other

Wacker-chemie Gmbh

Siltronic Ag

Theresia Bauer

Reinhold Wahlich

Hanns Wochner

Alfred Buchner

Susanne Weizbauer

Josef Dietl

Wilfried Von Ammon

Dieter Seifert

Andreas Huber

Robert Hoelzl

Herbert Pichler

G&uuml;nther Obermeier

Werner Ott

Wilhelm Schmidbauer

J&uuml;rgen Hage

Rasso Ostermeir

Gunther Obermeier

Alfred Bergler

Semiconductor wafers are leveled by position-dependent measurement of a wafer-characterizing parameter to determine the position-dependent value of this parameter over an entire surface of the semiconductor wafer, etching the entire surface of the semiconductor wafer simultaneously under the action of an etching medium with simultaneous illumination of the entire surface, the material-removal etching rate dependent on the light intensity at the surface of the semiconductor wafer, the light intensity being established in a position-dependent manner such that the differences in the position-dependent values of the parameter measured in step a) are reduced by the position-dependent material-removal rate. Semiconductor wafers with improved flatness and nanotopography, and SOI wafers with improved layer thickness homogeneity are produced by this process.

Method and apparatus for leveling a semiconductor wafer, and semiconductor wafer with improved flatness

A semiconductor wafer has a front side a back side a top layer a bottom layer an upper inner layer lying below the top layer a lower inner layer lying above the bottom layer a central region between the layers and an uneven distribution of crystal lattice defects. The concentration of the defects exhibits a first maximum (max ) in the central region and a second maximum (max ) in the bottom layer

Semiconductor wafer with crystal lattice defects, and process for producing this semiconductor wafer

A semiconductor wafer has a front side , a back side , a top layer , a bottom layer , an upper inner layer lying beneath the top layer , an lower inner layer lying above the bottom layer , a central region between the layers and , and an uneven distribution of crystal lattice defects. The crystal lattice defects are substitutionally or interstitially included nitrogen or vacancies.

Semiconductor wafer with crystal lattice defects, and process for producing this wafer

Semiconductor material has a low metal concentration at the surface. The semiconductor material has an iron content and/or chromium content on the surface of less than 6.66&times;10,g/cm,. A method for producing this semiconductor material includes a preliminary cleaning, a main cleaning and hydrophilization. A device for use in this method has a container with pyramid-shaped recesses at the bottom.

Method for producing a semiconductor material

A process is taught for etching semiconductor wafers with an etching mixture comprising nitric and hydrofluoric acids and optionally a surfactant. To this mixture are added either more hydrofluoric acid, or more hydrofluoric and nitric acids, with the added acids having concentrations of at least 70% by weight. The use of concentrated acids reduces the loss of substrate material and extends etching bath life.

Process for etching semiconductor wafers

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Burgkirchen, Germany

Theresia Bauer