Applied Materials, Inc.

Theresa Kramer Guarini

Malcolm J Bevan

Lara Hawrylchak

Wei Liu

Bernard Lloyd Hwang

Benjamin Colombeau

Kin Pong Lo

Michael Patrick Chudzik

Naomi Yoshida

Shiyu Sun

Sung Won Jun

Christopher Sean Olsen

Vladimir Nagorny

Udayan Ganguly

Errol Antonio C Sanchez

Johanes F Swenberg

Jeffrey A Tobin

Rene George

Saurabh Chopra

Peter Stone

Bingxi Sun Wood

Johanes S Swenberg

Nam Sung Kim

Swayambhu Prasad Behera

Vanessa Pena

Chi Wei Lo

Jacob Abraham

Matthew S Rogers

Steven C H Hung

Yoshitaka Yokota

Linlin Wang

Houda Graoui

Yonah Cho

Byeong Chan Lee

Andy Lo

Philip A Bottini

Huy Q Nguyen

James P Cruse

Jian Wu

David Chu

Lucien Date

Johanes Swenburg

Jeffrey Charles Pierce

One or more embodiments described herein generally relate to systems and methods for calibrating an optical emission spectrometer (OES) used for processing semiconductor substrates. In embodiments herein, a light fixture is mounted to a plate within a process chamber. A light source is positioned within the light fixture such that it provides an optical path that projects directly at a window through which the OES looks into the process chamber for its reading. When the light source is on, the OES measures the optical intensity of radiation from the light source. To calibrate the OES, the optical intensity of the light source is compared at two separate times when the light source is on. If the optical intensity of radiation at the first time is different than the optical intensity of radiation at the second time, the OES is modified.

Methods for calibrating an optical emission spectrometer

Embodiments described herein generally relate to a method and apparatus for fabricating a chamber component for a plasma process chamber. In one embodiment a chamber component used within a plasma processing chamber is provided that includes a metallic base material comprising a roughened non-planar first surface, wherein the roughened non-planar surface has an Ra surface roughness of between 4 micro-inches and 80 micro-inches, a planar silica coating formed over the roughened non-planar surface, wherein the planar silica coating has a surface that has an Ra surface roughness that is less than the Ra surface roughness of the roughened non-planar surface, a thickness between about 0.2 microns and about 10 microns, less than 1% porosity by volume, and contains less than 2Eatoms/centimetersof aluminum.

Process chamber process kit with protective coating

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.

Film thickness uniformity improvement using edge ring and bias electrode geometry

Edge ring

Described is a method of manufacturing a gate-all-around electronic device. The method includes forming a thermal oxide layer though an enhanced in situ steam generation process in combination with atomic layer deposition of a low-κ layer. The thin thermal oxide layer passivates the interface between the silicon layer and the dielectric layer of the GAA. A passivation process after the deposition of the low-κ layer reduces the bulk trap and enhances the breakdown performance of the GAA transistor.

Gate all around I/O engineering

Described is a method of manufacturing a gate-all-around electronic device. The method includes forming a thermal oxide layer though an enhanced in situ steam generation process in combination with atomic layer deposition of a low-&#x3ba; layer. The thin thermal oxide layer passivates the interface between the silicon layer and the dielectric layer of the GAA. A passivation process after the deposition of the low-&#x3ba; layer reduces the bulk trap and enhances the breakdown performance of the GAA transistor.

Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.

Horizontal gate all around and FinFET device isolation

A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.

Thin film treatment process

Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

Method and apparatus for precleaning a substrate surface prior to epitaxial growth

Embodiments described herein generally relate to methods and apparatus for horizontal gate all around (hGAA) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. The different materials may be silicon containing materials and one or more III/V materials. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.

Horizontal gate all around device isolation

Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.

Plasma treating a process chamber

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San Jose, CA, United States of America

Theresa Kramer Guarini