USA As Represented by Secretary of the Navy

Theresa F Chick

John Bradley Boos

Brian R Bennett

James G Champlain

Mario Ancona

An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.

Strained InGaAs quantum wells for complementary transistors

A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of InAlAs on an InP substrate, where the InAlAs is lattice matched to InP, followed by an AlAsSbbuffer layer on the InAlAs layer, an AlAsSbspacer layer on the AlAsSbbuffer layer, a GaSb quantum well layer on the AlAsSbspacer layer, an AlAsSbbarrier layer on the GaSb quantum well layer, an InAlSb etch-stop layer on the AlAsSbbarrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.

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Alexandria, VA, United States of America

Theresa F Chick