Philips Electronics North America Corporation

Koninklijke Philips Corporation N.v.

Nxp B.v.

Globalfoundries Inc.

Globalfoundries U.S. Inc.

International Business Machines Corporation

Philips North America LLC

Theodore James Letavic

Mark Simpson

John Petruzzello

Yusheng Bian

Yun Shi

Santosh Sharma

Michael Joseph Zierak

Hemant M Dixit

Benoit Dufort

Michel J Abou-Khalil

Natalie Barbara Feilchenfeld

Alvin Jose Joseph

James Albert Slinkman

Alan Bernard Botula

John J Ellis-Monaghan

Ajey Poovannummoottil Jacob

Kenneth John Giewont

Rene Paul Zingg

Francis Zaato

J Van Zwol

Anthony K Stamper

Steven M Shank

Zhong-Xiang He

Matthias Wendt

Stephen Ellinwood Luce

William James Taylor, Jr

Richard A Phelps

Karen A Nummy

Max Gerald Levy

John Douglas Fraser

Yves T Ngu

Manjin J Kim

Nikhil R Taskar

Wibo Daniel Van Noort

Shiwei Zhou

Naveed Majid

Emil Arnold

Frederick Gustav Anderson

Dev Alok

Abu Thomas

Oscar Restrepo

Satyen Mukherjee

Richard H Egloff

Andrew M Warwick

Wibo Van Noort

Charudatta Mandhare

Arno Emmerik

Erik Peters

John Pettruzello

Structures including an optical component and methods of fabricating a structure including an optical component. The structure includes an optical component having a waveguide core, and multiple features positioned adjacent to the waveguide core. The waveguide core contains a first material having a first thermal conductivity, and the features contain a second material having a second thermal conductivity that is greater than the first thermal conductivity.

Thermally-conductive features positioned adjacent to an optical component

The disclosed subject matter relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to photonic devices having thermally conductive layers for the removal of heat from optoelectronic components in the photonic devices.

Photonic devices integrated with thermally conductive layers

Structures including an optical component and methods of fabricating a structure including an optical component. The structure includes a substrate, an optical component including a waveguide core, and a back-end-of-line stack including a heat spreader layer. The optical component is positioned in a vertical direction between the substrate and the back-end-of-line stack. The waveguide core contains a first material having a first thermal conductivity, and the heat spreader layer contains a second material having a second thermal conductivity that is greater than the first thermal conductivity of the first material.

Thermal management of an optical component for temperature control

Structures including an optical component and methods of fabricating a structure including an optical component. The structure includes a waveguide core and a back-end-of-line stack including a first metallization level, a second metallization level, and a heat sink having a metal feature in the second metallization level. The heat sink is positioned adjacent to a section of the waveguide core. The first metallization level including a dielectric layer positioned between the metal feature and the section of the waveguide core.

Optical components with enhanced heat dissipation

Structures for an edge coupler and methods of fabricating a structure for an edge coupler. A first waveguide core has a first section that has a tapered shape and a second section that is adjoined to the first section. Multiple segments are positioned with a spaced arrangement adjacent to an end surface of the second section of the first waveguide core. A slab layer is adjoined to the first section of the first waveguide core. A second waveguide core has a section that overlaps with the first section of the first waveguide core to define a layer stack. The section of the second waveguide core has a tapered shape, and the first and second waveguide cores are comprised of different materials. The first section of the first waveguide core has a first thickness, and the slab layer has a second thickness that is less than the first thickness.

Hybrid edge couplers with stacked inverse tapers

The present disclosure generally relates to semiconductor detectors for use in optoelectronic devices and integrated circuit (IC) chips, and methods for forming same. More particularly, the present disclosure relates to integration of semiconductor detectors with Bragg reflectors. The photodetector of the present disclosure includes a substrate, a Bragg reflector disposed on the substrate, and a semiconductor detector disposed on the Bragg reflector. The Bragg reflector includes alternating layers of a semiconductor material and a dielectric material.

Semiconductor detectors integrated with Bragg reflectors

Structures that include a Bragg grating and methods of fabricating a structure that includes a Bragg grating. Bragg elements are positioned adjacent to a waveguide. The Bragg elements are separated by grooves that alternate with the Bragg elements. A dielectric layer includes portions positioned to close the grooves to define airgaps. The airgaps are respectively arranged between adjacent pairs of the Bragg elements. The Bragg elements may be used to form the Bragg grating.

Bragg gratings with airgap cladding

Disclosed are methods that employ a mask with openings arranged in a pattern of elongated trenches and holes of varying widths to achieve a linearly graded conductivity level. These methods can be used to form a lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) with a drain drift region having an appropriate type conductivity at a level that increases essentially linearly from the body region to the drain region. Furthermore, these methods also provide for improve manufacturability in that multiple instances of this same pattern can be used during a single dopant implant process to implant a first dopant with a first type (e.g., N-type) conductivity into the drain drift regions of both first and second type LDMOSFETs (e.g., N and P-type LDMOSFETs, respectively). In this case, the drain drift region of a second type LDMOSFET can subsequently be uniformly counter-doped. Also disclosed are the resulting semiconductor structures.

Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure

Low leakage, high frequency devices and methods of manufacture are disclosed. The method of forming a device includes implanting a lateral diffusion drain implant in a substrate by a blanket implantation process. The method further includes forming a self-aligned tapered gate structure on the lateral diffusion drain implant. The method further includes forming a halo implant in the lateral diffusion drain implant, adjacent to the self-aligned tapered gate structure and at least partially under a source region of the self-aligned tapered gate structure.

Low leakage, high frequency devices

An integrated circuit is provided, which comprises at least one first group each having at least one analog unit; and at least one second group each having at least one electronically settable semi-permanent switching unit coupled to the at least analog unit of the first group for trimming the first group and having at least one many-times-programmable and non-volatile cell (MTP). Each many-times-programmable cell (MTP) comprises at least one MOS transistor having a floating gate (FG) with a tunnel oxide (TO) and a first capacitor coupled to the floating gate (FG). The capacitance of the first capacitor is substantially larger than a gate-channel capacitance of the MOS transistor.

Integrated circuit with trimming

Disclosed are embodiments of a lateral, extended drain, metal oxide semiconductor, field effect transistor (LEDMOSFET) having tapered dielectric field plates positioned laterally between conductive field plates and opposing sides of a drain drift region of the LEDMOSFET. Each dielectric field plate comprises, in whole or in part, an airgap. These field plates form plate capacitors that can create an essentially uniform horizontal electric field profile within the drain drift region so that the LEDMOSFET can exhibit a specific, relatively high, breakdown voltage (Vb). Tapered dielectric field plates that incorporate airgaps provide for better control over the creation of the uniform horizontal electric field profile within the drain drift region, as compared to tapered dielectric field plates without such airgaps and, thereby ensure that the LEDMOSFET exhibits the specific, relatively high, Vb desired. Also disclosed herein are embodiments of a method of forming such an LEDMOSFET.

Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered airgap field plates

High-voltage LDMOS devices with voltage linearizing field plates and methods of manufacture are disclosed. The method includes forming an array of poly islands and a control gate structure by patterning a poly layer formed over a deep well region and a body of a substrate. The method further includes forming a metal shield in contact with the control gate structure and over the array of poly islands.

High voltage laterally diffused metal oxide semiconductor

A high-voltage LDMOS device with voltage linearizing field plates and methods of manufacture are disclosed. The method includes forming a continuous gate structure over a deep well region and a body of a substrate. The method further includes forming oppositely doped, alternating segments in the continuous gate structure. The method further includes forming a contact in electrical connection with a tip of the continuous gate structure and a drain region formed in the substrate. The method further includes forming metal regions in direct electrical contact with segments of at least one species of the oppositely doped, alternating segments.

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Putnam Valley, NY, United States of America

Theodore James Letavic