United States of America As Represented by the Secretary of the Air Force

Rockwell International Corporation

Theodore J LaChapelle, Jr

James J Licari

Frank A Pizzarello

John R Davis

A low inductance, rapid response, heater for silicon photodetector and microcircuit applications is realized by depositing on a substrate surface a heater whose contact terminals and resistance element are configured to eliminate electrical noise due to the induced currents that commonly result from on-off switching action. The heater geometry utilizes a concentric ring configuration and consists of an inner disc-shaped contact terminal, a ring-shaped resistive heater element surrounding the disc-shaped contact terminal and an outer peripheral contact terminal surrounding the heater element. The heater is operated by means of an electrical current flowing in a radial direction through the circuit comprising the outer peripheral contact terminal, the annular resistive heater element and the inner contact terminal.

Low inductance heater configuration for solid state devices and

A monometallic batch process for forming beam leads of a preferred metal such as aluminum or gold. The process is applied to a wafer of finished microelectronic devices already having metal contact pads of the same preferred metal. Where aluminum is the desired metal, high deposition rates are used to minimize aluminum oxide contamination. High yield is achieved by forming the beam leads to have an elevated cantilevered configuration, by deep scribing of the wafer and, when desired, by providing an energy absorbing cushion to reduce the effect of collisions between chip edges and beam leads.

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Orange, CA, United States of America

Theodore J LaChapelle, Jr