Applied Materials, Inc.

Twin Creeks Technologies, Inc.

Gtat Corporation

Neutron Therapeutics Inc.

Axcelis Technologies, Inc.

Ibis Technology Corporation

Orion Equipment, Inc.

Theodore H Smick

Geoffrey Ryding

Takao Sakase

Marvin Farley

Joseph Daniel Gillespie

Ronald Horner

Paul Eide

Hilton Frank Glavish

William H Park, Jr

Kenneth Harry Purser

Steven Richards

Christopher John Petti

Venkatesan Murali

Gopalakrishna B Prabhu

Mohamed M Hilali

Zhiyong Li

Kathy Jackson

Bernhard F Cordts, Iii

William Park, Jr

Drew Arnold

Steven P Konish

Robert S Andrews

Shu Satoh

Gopal Prabhu

Peter Rose

Robert B Clark-Phelps

William H Park

Steve Bababyan

Adam Kell

Steve Zuniga

Bo H Vanderberg

Edward Eisner

Adrian John Murrell

Bernard F Harrison

Brian S Freer

William Leavitt

Peter I Edwards

John Gordon

Kan Ota

Keith D Relleen

John Ruffell

Robert J Mitchell

Donald N Polner

Donovan Beckel

Mark Lambert

Frank D Roberts

Joeph Daniel Gillespie

Malcolm Barnett

According to some embodiments, an electrostatic particle accelerator may include an assembly having a motor and support plate; an acceleration tube; one or more stage assemblies each having an alternator coupled to a common drive shaft, a power supply coupled to one of the plurality of electrodes, and an opening to receive a portion of the acceleration tube; a pressure vessel configured to enclose the acceleration tube when the pressure vessel is fastened to the support plate; and a circulator configured to pump high pressure gas into the pressure vessel. The acceleration tube can include an ion source, an extraction assembly, and a plurality of tube segments each having a plurality of electrodes and one or more power connectors attached to one of the electrodes.

Compact motor-driven insulated electrostatic particle accelerator

Apparatuses and methods for producing neutrons for applications such as boron neutron capture therapy (BNCT) are described. An apparatus can include a rotary fixture with a coolant inlet and a coolant outlet, and a plurality of neutron-producing segments. Each neutron-producing segment of the plurality of neutron-producing segments is removably coupled to the rotary fixture, and includes a substrate having a coolant channel circuit defined therein and a solid neutron source layer disposed thereon. The coolant channel circuits are in fluid communication with the coolant inlet and the coolant outlet.

Neutron target for boron neutron capture therapy

The present disclosures relates to an ion beam assembly where a relatively small deflection angle (approximately 15&#xb0; from the center of the beam line) is used in conjunction with two beam dumps located on either side of the beam. In some embodiments, the combination of the two beam dumps and the magnet assembly can provide an ion beam filter. In some embodiments, the resulting system provides a smaller, safer and more reliable ion beam. In some embodiments, the ion beam can be a proton beam.

Ion beam filter for a neutron generator

A system for controlling a high-power ion beam is disclosed, such as for steering, measuring, and/or dissipating the beam's power. In one embodiment, the ion beam can be controlled by being imparted into a cylindrical tube (e.g., a faraday cup), and deflected to strike an interior tube wall at an angle, thereby increasing an impact area of the beam on the wall. By also rotating the deflected beam around a circumference of the interior wall, the impact area of the ion beam may be further increased, thereby absorbing (dissipating) the high-power ion beam on the wall. In another embodiment, the ion beam may be passed through first, second, and third adjustable magnetic rings. By adjusting a relative angle between the rings and a combined rotation angle of all of the rings, a deflected ion beam may be rotated around a circumference of the interior wall of a power-absorbing tube, accordingly.

Systems for controlling a high power ion beam

A continuous, thin layer of neutron source material, for example solid lithium, is formed into a belt. The belt is continuously advanced in front of a proton source to generate neutrons from the lithium target. Additionally, the belt is continuously cooled, as it passes through a gas cooling section. Through the continuous motion and cooling of the lithium target, the belt can provide an effective neutron source without melting the target neutron source material.

Belt-shaped neutron source

Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60&#xb0;. A collimated scanned beam of ions, for example H, is directed along a final beam path which is at an angle of at least 45&#xb0; to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.

Ion implant apparatus and a method of implanting ions

A d. c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In an embodiment, direct connections are provided to gap electrodes from the stage points of a multistage Cockcroft Walton type voltage multiplier circuit. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.

D.C. charged particle accelerator and a method of accelerating charged particles

A d.c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In embodiments, the individually regulated gap voltages are generated by electrically isolated alternators mounted on a common rotor shaft driven by an electric motor. Alternating power outputs from the alternators provide inputs to individual regulated d.c. power supplies to generate the gap voltages. The power supplies are electrically isolated and have outputs connected in series across successive pairs of accelerator electrodes. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.

D. c. Charged particle accelerator, a method of accelerating charged particles using d. c. voltages and a high voltage power supply apparatus for use therewith

A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.

Method to form a device by constructing a support element on a thin semiconductor lamina

A method for producing a lamina from a donor body includes implanting the donor body with an ion dosage and separably contacting the donor body with a susceptor assembly, where the donor body and the susceptor assembly are in direct contact. A lamina is exfoliated from the donor body, and a deforming force is applied to the lamina or to the donor body to separate the lamina from the donor body.

Method and apparatus for forming a thin lamina

A voltage supply incorporates two voltage supplies connected in a mirror-image series arrangement to generate a DC voltage between the respective common terminals of the voltage supplies.

Mirror-image voltage supply

An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. The wafer carriers have wafer retaining fences formed as cylindrical rollers with axes in the respective wafer support planes of the wafer carriers. The cylindrical surfaces of the rollers provide wafer abutment surfaces which can move transversely to the wafer support surfaces so that no transverse loading is applied by the fences to wafer edges as the wafer is pushed against the heat sink by centrifugal force. The wafer support surfaces comprise layers of elastomeric material and the movable abutment surfaces of the fences allow even thermal coupling with the heat sink over the whole area of the wafer.

Ion implantation apparatus

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Essex, MA, United States of America

Theodore H Smick