Leland Stanford Junior University

The United States of America As Represented by the United States

Bell Telephone Laboratories

Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Conductus, Inc.

Universitaet Augsburg

Universitat Augsburg

Theodore H Geballe

William J Nellis

M Brian Maple

Kookrin Char

Robert H Hammond

Jonathan Zanhong Sun

Pin-Chin Connie Wang

Ping K Tien

Chandra K Patel

Aharon Kapitulnik

Bruce M Lairson

Robert S Feigelson

Jochen Mannhart

Brian H Moeckly

Byungdu Oh

Malcolm R Beasley

Dan Gazit

Michio Naito

Cyril Stephanos

Andy Kent

Khiem B Do

Andreas Schmehl

Aly H Dayem

Stefan Meir

A thermoelectronic energy converter device () comprises an electron emitter () being adapted for a temperature-dependent release of electrons (), an electron collector () being adapted for collecting the electrons (), wherein the electron collector () is spaced from the electron emitter () by an evacuated gap (), a gate electrode () being arranged between the electron emitter () and the electron collector () for subjecting the electrons () in the gap () to an accelerating electric potential, wherein the gate electrode () has a plurality of electrode openings () being arranged for transmitting electrons () miming from the electron emitter () to the electron collector (), and a magnetic field device () being arranged for creating a magnetic field with magnetic field lines extending between the electron emitter and the electron collector (), wherein the magnetic field device () is arranged such that at least a portion of the magnetic field lines pass through the electrode openings (). Furthermore, a method of converting energy using the thermoelectronic energy converter device () is described.

Device and method for thermoelectronic energy conversion

A thin film of material having a rock-salt-like structure is deposited on a smooth amorphous substrate surface by ion beam assisted deposition.

Thin films having rock-salt-like structure deposited on amorphous surfaces

A conductor suitable for use in oxide-based electronic devices and circuits is disclosed. Metallic oxides having the general composition AMO.sub.3, where A is a rare or alkaline earth or an alloy of rare or alkaline earth elements, and M is a transition metal, exhibit metallic behavior and are compatible with high temperature ceramic processing. Other useful metallic oxides have compositions (A.sub.1-x A'.sub.x)A'.sub.2 (M.sub.1-y M'.sub.y).sub.3 O.sub.7-.delta. or (A.sub.1-x A'.sub.x).sub.m (M.sub.1-y M'.sub.y).sub.n O.sub.2m+n, where 0.ltoreq.x, y.ltoreq.1 and 0.5.ltoreq.m, n.ltoreq.3, A and A' are rare or alkaline earths, or alloys of rare or alkaline earths, A' and A' are alkaline earth elements, alloys of alkaline earth elements, rare earth elements, alloys of rare earth elements, or alloys of alkaline earth and rare earth elements, and M and M' are transition metal elements or alloys of transition metal elements. The metallic oxides grow epitaxially on oxide superconductors as well as on substrates and buffer layers commonly used for growth of oxide superconductors. The oxide superconductors can also be grown epitaxially on these metallic oxides. Vastly improved performance of superconductor-normal-superconductor (SNS) junctions in high temperature superconductor materials are obtained when the normal material is a metallic oxide of the type disclosed. In the preferred embodiment, the conducting oxide CaRuO.sub.3 is used as the normal material in an SNS junelion with YBa.sub.2 Cu.sub.3 O.sub.7-.delta. as superconductor. A dc superconducting quantum interference device (SQUID) functioning at 77K fabricated with this type of junction exhibits large modulation and low noise.

Barrier layers for oxide superconductor devices and circuits

Magnetic shielding currents having a critical current density, Jc, at a superconducting temperature are stabilized by reducing the temperature of the superconducting body after a steady state or persistent current is established. The current density of the current at the reduced temperature is below the critical current density for the material at the reduced temperature. Decay of the magnetic shielding current at the reduced temperature is significantly reduced.

Method of reducing decay of magnetic shielding current in high T.sub.c

A method is provided for making a flexible superconductive composite wire by drawing a wire of noble metal through a melt formed from solid superconducting material. The preferred superconducting material comprises the Bi-Sr-Ca-Cu-O class of materials.

Method of forming a ceramic superconducting composite wire using a

A method of forming a superconducting YBa.sub.2 Cu.sub.3 O.sub.7-x thin film with selected crystal orientation is described which comprises the steps of sputtering simultaneously Y, Ba and Cu onto the surface of a substrate, introducing oxygen at said surface during deposition, controlling the stoichiometry of the elements Y, Ba or both richer or poorer than the 1:2:3 stoichiometry within a few atom percent and followed by annealing to selectively grow an a-axis or a c-axis oriented film of YBa.sub.2 Cu.sub.3 O.sub.7-x.

Method of forming superconducting YBa.sub.2 Cu.sub.3 O.sub.7-x thin

Shock wave formation of thin layers of materials with improved superconducting and permanent magnetic properties and improved microstructures. The material fabrication system includes a sandwiched structure including a powder material placed between two solid members to enable explosive shock consolidation. The two solid members are precooled to about 80.degree.-100.degree. K. to reduce the residual temperatures attained as a result of the shock wave treatment, and thereby increase the quench rate of the consolidated powder.

Dynamic high pressure process for fabricating superconducting and

Shock wave formation of superconductive ceramic oxide electric and magnetic circuit elements with improved microstructures and mechanical properties.

Shock wave formation of thin layers of materials with improved superconducting and permanent magnetic properties and improved microstructures.

Nb.sub.3 Ge, Nb.sub.3 Al and Nb.sub.3 Si are prepared in A15 structures at the exact stoichiometric ratio with epitaxial growth on selected substrates. The phase diagrams of the materials are altered by this technique and only the A15 phase is stable at the stoichiometric ratios thus permitting attainment of higher and sharper transition temperatures.

Growing community of inventors

Woodside, CA, United States of America

Theodore H Geballe