Exxon Research and Engineering Company

Theodore D Moustakas

H Paul Maruska

Robert A Friedman

Benjamin Abeles

Christopher R Wronski

Don L Morel

Paul H Maruska

Michael C Hicks

If a semiconductor device is prepared so that it contains a photoconductive region in electrical series with a photovoltaic region, (i.e., a Schottky barrier or p-n junction) it can function as an optical amplifier and detector. When weak ac light plus an intense dc light are focused on this sample in an appropriate manner, the detected ac electric current will correspond to the intensity of the dc light but have the phase of the ac light; thus a weak ac light signal is effectively amplified, or a dc light signal is converted into an ac electrical signal capable of synchronous detection.

Optical detector and amplifier based on tandem semiconductor devices

A reactively sputtered photoconductive amorphous silicon film having a controlled monohydride and polyhydride bond density is produced by applying a DC voltage bias to the film's substrate during deposition.

Control of the hydrogen bonding in reactively sputtered amorphous silicon

A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

Method for sputtering a PIN amorphous silicon semi-conductor device

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

Method for sputtering a PIN microcrystalline/amorphous silicon

A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

Sputtered pin amorphous silicon semi-conductor device and method therefor

The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

Hybrid method of making an amorphous silicon P-I-N semiconductor device

Amorphous silicon is selectively etched by concurrently exposing the silicon to a ionized plasma containing hydrogen and heating the silicon to a temperature of between about 150.degree. C. to about 350.degree. C. In one embodiment the selective etching technique is utilized to texture the surface of the amorphous silicon reducing the reflectivity thereof to less then about 5%.

Plasma etching of amorphous silicon (SE-35)

An amorphous silicon semiconductor having a gradient doping profile is produced by thermo-electrically diffusing an ionizable deposit material such as antimony or aluminum, for example, into the amorphous silicon layer. Embodied in a photovoltaic device, the gradient doping profile increases the width of the depletion or barrier region and concurrently ensures an ohmic contact between amorphous silicon and current carrying electrodes.

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Berkeley Heights, NJ, United States of America

Theodore D Moustakas