Koninklijke Philips Corporation N.V.

Lumileds LLC

Philips Lumileds Lighting Company LLC

Lumileds Holding B.v.

Theodore Chung

Parijat Deb

Erik Charles Nelson

Lekhnath Bhusal

Anneli Munkholm

Suk Choi

Parijat P Deb

A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.

Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices

A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer. The active layer may include a first barrier layer arranged to have a tensile strain, a second barrier layer arranged to have a tensile strain, and a first well layer disposed between the first barrier layer and the second barrier layer. The active layer may also include a first unstrained barrier layer, a second unstrained barrier layer, and a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer.

A method for fabricating an epitaxial structure includes providing a substrate () and a heterojunction stack on a first side the substrate, and forming a GaN light emitting diode stack () on a second side of the substrate. The heterojunction stack includes an undoped gallium nitride (GaN) layer and a doped aluminum gallium nitride (AIGaN) layer on the undoped GaN layer. The GaN light emitting diode stack () includes an n-type GaN layer () over the substrate, a GaN/indium gallium nitride (InGaN) multiple quantum well (MQW) structure () over the n-type GaN layer, a p-type AIGaN layer () over the n-type GaN/InGaN MQW structure, and a p-type GaN layer () over the p-type AIGaN layer.

Integration of gallium nitride LEDs with aluminum nitride/gallium nitride devices on silicon substrates for AC LEDs

A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsPp-contact layer, wherein x&#x3c;0.45. A first metal contact is in direct contact with the GaAsPp-contact layer. A second metal contact is electrically connected to the n-type region. The first and second metal contacts are formed on a same side of the semiconductor structure.

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Santa Clara, CA, United States of America

Theodore Chung