Sharp Laboratories of America, Inc

Themistokles Afentakis

Apostolos T Voutsas

Paul John Schuele

Karen Yuri Nishimura

Kurt M Ulmer

John Hartzell

Lisa Stecker

Anne Sledd

Shivani Joshi

Disclosed herein are a circuit and a method for the electrical data read-out of a large-area sensor flexible circuit. This circuit incorporates sensing elements of two types, and is therefore used for the measurement of two physical metrics associated with the etiology of pressure ulcers, one of which might be pressure. The flexible circuit is large enough to cover the area(s) of the human body. The flexible circuit comprises electrically of the following components: (a) a passive or active matrix array, and (b) its scanning/read-out circuitry. The matrix array (a) comprises further of (i) two electrodes for the sensing of pressure in each sensing element (sensel) of the array, and (ii) two electrodes for the sensing of another metric (temperature, moisture, pH, etc.) in each sensel. One electrode is shared (common) between the first (i) and the second (ii) sensor in the sensel.

Matrix multi-sensor array

A method is provided for making multiple environmental measurements using a single sensing element. Each sensing element (sensel) includes a thin-film transistor (TFT) and a passive element. Typically, a plurality of sensels is provided arranged into an array. In response to an electrical stimulus, an electrical measurement is supplied that is responsive to a change in TFT electrical characteristic correlated to a first environmental condition, as well as a change in a characteristic of the passive element correlated to a second environmental condition. When the sensels are formed in an array, a plurality of electrical measurements is supplied corresponding plurality of locations on a monitored surface. Some exemplary environmental conditions include temperature, pressure, moisture, chemicals, oxygen, solution pH, salinity, and shear. The method determines the first environmental condition independent of the second environmental condition, while determining the second environmental condition independent of the first environmental condition.

Dual-function active matrix sensor array

A circuit-on-wire (CoW) is provided that is made from a flexible metal wire with an outer surface, and a plurality of discrete electrical control devices formed in series along the metal wire outer surface. Each control device may have an electrical contact accessible through the metal wire. In one aspect, the control device may have a via through the metal wire from the top surface to the bottom surface with a second electrical contact accessible through the via. In addition, the control devices may have a top surface with an accessible third electrical contact. For example, the control device may be a first thin-film transistor (TFT), with a gate electrode accessible through the metal wire, wherein the second electrical contact is a first source/drain (S/D) electrode, and wherein the third electrical contact is a second S/D electrode. Using the above-described CoW, a woven active matrix array can be fabricated.

Circuit-on-wire

A flexible active matrix array is provided, made with a flexible substrate and an array of pixels overlying the substrate, where each pixel includes an active device and a light controlling device. The array also includes a plurality of parallel row lines overlying the substrate, with each row line formed in serpentine pattern with a plurality of partial-loops, to supply a first signal to a corresponding plurality of pixels. A plurality of parallel column lines overlies the substrate, orthogonal to the row lines. Each column line is formed in a serpentine pattern with a plurality of partial-loops, to supply a second signal to a corresponding plurality of pixels. Each pixel has a border, with each row line partial-loop formed along about 75% of a pixel border, and each column line partial-loop formed along about 75% of a pixel border. Also provided is a printed circuit board with serpentine traces.

Pixel design for flexible active matrix array

A method is provided for forming an epoxy-based planarization layer overlying an organic semiconductor (OSC) film. Generally, the method forms a fluoropolymer passivation layer overlying the OSC layer. A photopatternable adhesion layer is formed overlying the fluoropolymer passivation layer, and patterned. A photopatternable planarization layer, comprising an epoxy-based organic resin, is formed overlying the photopatternable adhesion layer and patterned to expose the fluoropolymer passivation layer. Then, the fluoropolymer passivation layer is plasma etched to expose the OSC layer. More explicitly, the method can be used to fabricate a bottom gate or top gate organic thin-film transistor (OTFT). Top gate and bottom gate OTFT devices are also provided.

Organic semiconductor transistor with epoxy-based organic resin planarization layer

A video display is provided with a planar piezoelectric transmitter to transmit ultrasound signals, and a display panel including a plurality of pixels. Each pixel has a data interface to accept a video signal with a variable voltage associated with a range of light intensity values, and to supply a touch signal with a variable voltage derived from a range of reflected ultrasound signal energies. Each pixel is made up of a light device to supply light with an intensity responsive to the video signal voltage, and a storage capacitor to maintain a video signal voltage between refresh cycles. A piezoelectric transducer accepts a reflected ultrasound signal energy and maintains a touch signal voltage between refresh cycles. In one aspect, the storage capacitor and the piezoelectric transducer are the same device. The light device may be a liquid crystal (LC) layer or a light emitting diode.

In-pixel ultrasonic touch sensor for display applications

A method is provided for consuming oxides in a silicon (Si) nanoparticle film. The method forms a colloidal solution film of Si nanoparticles overlying a substrate. The Si nanoparticle colloidal solution film is annealed at a high temperature in the presence of titanium (Ti). In response to the annealing, Si oxide is consumed in a resultant Si nanoparticle film. In one aspect, the consuming the Si oxide in the Si nanoparticle film includes forming Ti oxide in the Si nanoparticle film. Also in response to a low temperature annealing, solvents are evaporated in the colloidal solution film of Si nanoparticles. Si and Ti oxide molecules are sintered in the Si nanoparticle film in response to the high temperature annealing.

Method for the selective oxidation of silicon nanoparticle semiconductor films in the presence of titanium

A four-transistor Schmitt trigger inverter is provided. The Schmitt trigger inverter is made from an n-channel MOS (NMOS) dual-gate thin-film transistor (DG-TFT) and a p-channel MOS (PMOS) DG-TFT, both DG-TFTs having a top gate, a back gate, and source/drain regions. A (conventional) NMOS TFT has a gate connected to an NMOS DG-TFT first S/D region and a PMOS DG-TFT first S/D region. The NMOS TFT also has a first S/D region connected to the NMOS DG-TFT back gate and the PMOS DG-TFT back gate. A (conventional) PMOS TFT has a gate connected to the NMOS TFT gate, and a first S/D region connected to the NMOS TFT first S/D region.

Four-transistor Schmitt trigger inverter with hysteresis

Inverter with four-transistor Schmitt trigger

A dual-gate thin-film transistor (DG-TFT) voltage storage circuit is provided. The circuit includes a voltage storage element, a DG-TFT having a first source/drain (S/D) connected to a data line, a top gate connected to a first gate line, a second S/D region connected to the voltage storage element, and a bottom gate connected to a bias line. In one aspect, the circuit further includes a voltage shifter having an input connected to the first gate line and an output to supply a bias voltage on the bias line. Examples of a voltage storage element include a capacitor, a liquid crystal (LC) pixel, and a light emitting diode (LED) pixel.

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Camas, WA, United States of America

Themistokles Afentakis