International Business Machines Corporation

Western Digital Technologies, Inc.

Maxtor Corporation

Boston Scientific Scimed, Inc.

Seagate Technology Incorporated

Tormem Inc.

Thao Anh Nguyen

Andrew Ching Tam

Peter Michael Baumgart

Quang Le

Zhigang Bai

Zhanjie Li

Wing P Leung

Erhard Theodor Schreck

Bruce C Schardt

Kuok San Ho

Xiaoyong Liu

Michael Kuok San Ho

Brian D Strom

Andrew LeFebvre

Hongquan Jiang

Donald Joseph Brunnett

Yongchul Ahn

Scott A Hughes

Chris Hawks

Kenneth F Binmoeller

Karl Arthur Flechsig

Gang Herbert Lin

Ullal Vasant Nayak

Anthony W Wu

Duc H Banh

Timothy C O'Sullivan

Francis P Crimi

Michael Ho

Hung V Nguyen

Kazuhiro Saito

Michael F Lee

Sieu T Duong

Zheng Gao

Thomas R Albrecht

Cherngye Hwang

Michael L Mallary

Steven W Meeks

Brian Rodrick York

Jih-Shiuan Luo

Richard Oswald

Hong S Seing

Xiaokun L Chew

Michael Barenboim

Benjamin Karni

Peter P Chrusch

Jingbo Yu

Steven B Marshall

Anthony R Hurtado

Fior D Sargent

Hanh H Duong

Robert McKenzie

Jack Tsai

Daniele Mauri

Kurt A Rubin

Christopher S Gudeman

Lin Guo

Don Brunnett

Rajeev Nagabhirava

Thomas A Gregory

Wentao Yan

Pieter J Kerstens

Lydia Baril

Run-Han Wang

Steven White

Douglas J Krajnovich

Gerard H Vurens

Joerg Ferber

Tim Glassburn

Scott Burns

Andrew Chen

Duc Bahn

Tony Hurtado

Pieter J M Kerstens

Hanh Duong

Hyunchul Shim

Pham Nam Hai

Ulla Vasant Nayak

Michael Luis Ramirez

A tissue lumen stent is provided with a body having an elongated tubular configuration and a foreshortened configuration. In the foreshortened configuration, downstream and upstream ends of the body expand radially into downstream and upstream flange structures, leaving a generally cylindrical saddle region therebetween. In some embodiments, the flange structures are non-symmetrical with respect to one another. Systems and methods of using the stents are also disclosed.

Biliary stents and methods

An apparatus is provided that includes an array including n rows and m columns of nodes, each row of nodes coupled to one of n first conductive lines, each column of nodes coupled to one of m second conductive lines, each node of the n rows and m columns of nodes including a spin orbit torque MRAM non-volatile memory cell configured to store a corresponding weight of an n×m array of weights each having a first weight value or a second weight value, and a control circuit configured to apply n input voltages each having a first input value or a second input value to corresponding n first conductive lines, the n input voltages corresponding to an n-element input vector. The spin orbit torque MRAM non-volatile memory cells are configured to generate m output currents at the m second conductive lines upon application of the n input voltages. The m output currents corresponding to a result of multiplying the input vector by the n×m array of weights.

Matrix-vector multiplication using SOT-based non-volatile memory cells

A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.

BiSb topological insulator with novel buffer layer that promotes a BiSb (012) orientation

Provided is a disaggregated memory server, which in some examples is a rack-mounted hardware appliance comprising a pool of memory for allocation to memory clients. Examples of memory clients may include one or more rack-mounted computing devices co-located on a rack with the disaggregated memory server. The disaggregated memory server may be optimized for high-speed dynamic memory allocation to the other computing devices in the rack.

Disaggregated memory server having chassis with a plurality of receptacles accessible configured to convey data with PCIE bus and plurality of memory banks

A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation

The present disclosure generally relates to a magnetic media drive employing a magnetic recording head. The magnetic recording head comprises a first write head, a second write head, at least one read head, and a thermal fly height control element. The first write head is a wide writing write head comprising a first main pole and a first trailing shield. The second write head a narrow writing write head comprising a second main pole, a trailing gap, a second trailing shield, and one or more side shields. The first main pole has a shorter height and a greater width than the second main pole. The second main pole has a curved or U-shaped surface disposed adjacent to the trailing gap. The thermal fly height control element and the at least one read head are aligned with a center axis of the second main pole of the second write head.

Dual writer for advanced magnetic recording

The present disclosure generally relates to a magnetic media drive employing a magnetic recording head. The magnetic recording head comprises a first write head and a second write head each coupled to a first pad and a second pad of a slider pad and an electrical circuit coupled to the first and second pads. The first write head is a wide writing write head, and the second write head a narrow writing write head. The electrical circuit comprises a first sub-circuit and a second sub-circuit connected in parallel. The first sub-circuit comprises a capacitor and a connection to a first thermal fly height control (TFC) of the first write head. The second sub-circuit comprises an inductor and a connection to a second TFC of the second write head. The electrical circuit is further connected to a third TFC of a read head, the second write head comprising the read head.

Optimized dual thermal fly-height design for dual writers for advanced magnetic recording

An apparatus is provided that includes an array including m rows and n columns of nodes. Each column of nodes is coupled to one of n first conductive lines, and each row of nodes is coupled to one of m second conductive lines. Each node of the m rows and n columns of nodes includes a spin orbit torque-based spin torque oscillator circuit configured to oscillate at a corresponding intrinsic frequency. The spin orbit torque-based spin torque oscillator circuits are configured to generate m output signals at the m second conductive lines upon application of n input signals to corresponding n first conductive lines. The n input signals correspond to an n-element input vector, and each input signal includes a corresponding input signal frequency. Each of the m output signals include frequency domain components at the input signal frequencies. The magnitudes of the frequency domain components at the input signal frequencies depend on a degree of synchronization between the input signal frequencies and the intrinsic frequencies.

SOT-based spin torque oscillators for oscillatory neural networks

An apparatus is provided that includes a magnetic tunnel junction, a magnetic assist layer coupled to the magnetic tunnel junction, a non-magnetic layer disposed between the free layer and the magnetic assist layer, and a spin Hall effect layer coupled to the magnetic assist layer. The magnetic tunnel junction includes a free layer in a plane, the free layer including a switchable magnetization direction perpendicular to the plane. The magnetic assist layer includes a magnetization direction parallel to the plane and free to rotate about an axis perpendicular to the plane.

Apparatus and methods for magnetic memory devices with magnetic assist layer

The present disclosure generally relates to sensor device, such as a magnetic sensor bridge, that utilizes a dual free layer (DFL) structure. The device includes a plurality of resistors that each includes the same DFL structure. Adjacent the DFL structure is a magnetic structure that can include a permanent magnet, an antiferromagnetic (AFM) layer having a synthetic AFM (SAF) structure thereon, a permanent magnetic having a SAF structure thereon, or an AFM layer having a ferromagnetic layer thereon. The DFL structures are aligned with different layers of the magnetic structures to differentiate the resistors. The different alignment and/or different magnetic structures result in a decrease in production time due to reduced complexity and, thus, reduces costs.

Magnetic sensor bridge using dual free layer

The present disclosure generally relates to a magnetic media drive employing a magnetic recording head. The magnetic recording head comprises a first write head and a second write head each coupled to a first pad and a second pad of a slider pad and an electrical circuit coupled to the first and second pads. The first write head comprises a first main pole and a first thermal fly height (TFH) element, and the second write head comprises a second main pole and a second TFH element. The electrical circuit comprises a capacitor and a connection to the first TFH element of the first write head, and an inductor and a connection to the second TFH element of the second write head. The electrical circuit is configured to independently power the first TFH element and the second TFH element.

The present disclosure generally relates to a magnetic media drive employing a magnetic recording head. The magnetic recording head comprises a first write head disposed adjacent to a second write head. The first write head comprises a first main pole coupled to a first yoke having a first length. The second write head comprises a second main pole coupled to a second yoke having a second length that is less than the first length of the first yoke. A first coil is wrapped around the first yoke, and a second coil is wrapped around the second yoke. The first coil is wrapped around the first yoke a greater number of times than the second coil is wrapped around the second yoke. Both the first and second coils comprise first portions comprised of a first material and second portions comprised of a second material different than the first material.

Helical coils design and process for dual writer magnetic recording

Growing community of inventors

San Jose, CA, United States of America

Thao Anh Nguyen