Applied Materials, Inc.

Aptos Energy, LLC

International Business Machines Corporation

Xilinx, Inc.

Thanh Ngoc Pham

Padmanabhan Krishnaraj

Farhad K Moghadam

DongQing Li

Jeong Soo Byun

M Ziaul Karim

Ellie Y Yieh

Lin Zhang

Xiaolin C Chen

Zhuang Li

Joe Feng

Steven P Young

Muhammad M Rasheed

Michael Santiago Cox

Tom K Cho

Raymond C Pang

Zhong Qiang Hua

Alvin Y Ching

Won B Bang

Yen-Kun Victor Wang

Hemant P Mungekar

Sudhir R Gondhalekar

Stuardo A Robles

Bang C Nguyen

Fong M Chang

Jeff Plante

Jennifer Y Sun

Michael S Barnes

Shankar Venkataraman

Soobaek Jang

Visweswaren Sivaramakrishnan

Zheng Yuan

Huan Wang

Zhenjiang Cui

Brian James Snitzer

Yang Zhao

Senh Thach

Li Xu

Yaxin Wang

Peter P Rodriguez

Dmitry Rekesh

James Douglas Dempster

Milton A Bonilla

David P Wanamaker

Eugene Fukshansky

Hai Yong Zhang

Kai Ding

Xiang Zhan

Kathleen H Sittler

A photovoltaic device includes an intrinsic layer having two or more sublayers. The sublayers are intentionally deposited to include complementary concave and convex shapes. The sum of these layers resulting in a relatively flat surface for deposition of n- or p-doped layers. The photovoltaic device is optionally bifacial.

Methods of producing uniform intrinsic layer

Photovoltaic devices including curved sub-layers

Methods of producing photoelectric devices

An approach is provided for optimizing service factors for computing resources in a networked computing environment. Specifically, under one approach, a cloud broker/aggregator, a cloud offering optimizer, and a user workload optimizer may be provided. The cloud aggregator may aggregate information/data pertaining to a set of service factors associated with a set of resources distributed among a set of deployment groups (e.g., cloud pods). The cloud offering optimizer may analyze this information and may determine a reallocation plan to optimize values of the service factors associated with the set of resources. The user workload optimizer may then receive the reallocation plan from the cloud offering optimizer and/or application event information, and modify the deployment topology accordingly.

Optimizing service factors for computing resources in a networked computing environment

A system for a package pre-fetching for a remote program installation. The system includes a cache and a service program unit. The service program unit receives a request for a package required for an installation of an operating system and at least one peripheral application thereof from a computing node. The service program unit determines a package request sequence by which the computer node issues one or more package requests according to a type of the computing node, so as to pre-read a subsequent package from an external storage device into the cache before the computing node issues a request for the subsequent package.

Service node, network, and method for pre-fetching for remote program installation

A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

Deposition-selective etch-deposition process for dielectric film gapfill

The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

Gas delivery system for semiconductor processing

Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 &#x3bc;m to about 25 &#x3bc;m. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.

Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate

A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.

Sequential gas flow oxide deposition technique

A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 10ions/cmis formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

In-situ-etch-assisted HDP deposition

According to one aspect of the invention, a circuit for accessing data in a memory is disclosed. The circuit generally comprises a first port having a read logic circuit and a first output which generates data from the memory. A second port has a read logic circuit and a write logic circuit. A second output is coupled to the second port, and also generates data from the memory. Circuits for separately selecting read and write widths for a port of a memory, such as a random access memory, are disclosed. Finally, other embodiments related to implementing a content addressable memory in a programmable logic device are disclosed. Further, a method of accessing data in a memory is disclosed.

Circuit for and method of implementing a content addressable memory in a programmable logic device

Memory device and method of transferring data in memory device

A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.

Deposition process for high aspect ratio trenches

Growing community of inventors

San Jose, CA, United States of America

Thanh Ngoc Pham