Leland Stanford Junior University

Thaibao Phan

Jonathan A Fan

David Sell

Jianji Yang

Evan W Wang

Certain examples are directed to methods for detection of anomalies in semiconductor thin-film materials, such as strains, defects and the like, that may precipitate defects in semiconductor processing steps and may adversely impact device and system-level functionality, processing, and yields. Certain methods use filtering optics to provide a set of filter-separated light beams respectively associated with different polarization states of polarized light directed towards a semiconductor-related material sample, and providing a set of sample-characterizing response data based on factors such as sets of polarization-state values, different wavelengths associated with the polarization states, and/or light-incidence angles characterizing separation of the different polarization states. Based on these factors, the types and severities of such anomalies may be analyzed and the related defects remedied.

Matrix-based characterization and measurements for semiconductor thin-film material

Certain examples are directed to optical elements or devices that pass or process the light based on a set of connectable metasurface elements having been topology optimized. The connectable metasurface elements are independently optimized or designed to have each section having its own metasurface phase profile corresponding to a desired phase profile. In this way, such devices need not be designed or manufactured by importing a large number of results into simulation efforts, thereby realizing significant saving in terms of optimization time and computational power.

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Thaibao Phan