Applied Materials, Inc.

Intermolecular, Inc.

Velo3d, Inc.

Thai Cheng Chua

Philip Allan Kraus

Christian Amormino

Hanh D Nguyen

James D Carducci

Richard Charles Fovell

Larry D Elizaga

John Patrick Holland

Christopher Sean Olsen

Benyamin Buller

Erel Milshtein

Sandeep Nijhawan

Jaeyong Cho

Cory M Czarnik

Silverst Rodrigues

Alex Paterson

Patricia M Liu

James P Cruse

Dmitry A Dzilno

Tatsuya E Sato

Steven C Hung

Chikuang Charles Wang

Christian Valencia

Khaled Ahmed

Kallol Bera

Guowen Ding

John Leonard Sudijono

Yu Wang

Valentin Nikolov Todorow

Guizhen Zhang

Joseph F AuBuchon

Vladimir Knyazik

Minh Anh Nguyen

Yuri S Uritsky

Tuck Foong Koh

Farzad Houshmand

Mani Subramani

Jenn-Yue Wang

Yoga Saripalli

Abhijit Basu Mallick

Mark Joseph Saly

Deenesh Padhi

Kelvin Chan

Mihaela A Balseanu

Hanhong Chen

Mikhail Korolik

Minh Le

Andreas G Hegedus

Timothy Joseph Franklin

Johanes F Swenberg

Bencherki Mebarki

Lakmal Charidu Kalutarage

Shreyas Kher

Roger Alan Lindley

Hang Yu

Sanjay G Kamath

Valentin N Todorov

Travis Koh

Faran Nouri

Hien Minh Huu Le

William John Durand

Vicknesh Sahmuganathan

Vinayak Veer Vats

Sze Chieh Tan

Changling Li

Wei Ying Doreen Yong

Boris Borisov

Giuseppina Conti

Doreen Yong

Masahiro Kawasaki

Paul E Gee

Shankar Muthukrisnan

Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a plasma to form a nanocrystalline diamond film. The resulting nanocrystalline diamond films are formed on an interfacial oxide-rich amorphous layer between the nanocrystalline diamond film and a silicon substrate.

Nanocrystalline diamond with amorphous interfacial layer

Embodiments disclosed herein include a method of etching a 3D structure. In an embodiment, the method comprises providing the 3D structure in a microwave plasma chamber. In an embodiment, the 3D structure comprises a substrate, and alternating layers of silicon oxide and silicon nitride over the substrate. In an embodiment, the method further comprises flowing a first gas into the microwave plasma chamber, where the first gas comprises sulfur and fluorine. In an embodiment, the method comprises flowing a second gas into the microwave plasma chamber, where the second gas comprises an inert gas. In an embodiment, the method further comprises striking a plasma in the microwave plasma chamber, and etching the silicon nitride, where an etching selectivity of silicon nitride to silicon oxide is 50:1 or greater.

Low temperature selective etching of silicon nitride using microwave plasma

Embodiments include a plasma processing tool that includes a processing chamber, and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources include an array of applicators that are positioned over a dielectric body that forms a portion of an outer wall of the processing chamber. The array of applicators may be coupled to the dielectric body. Additionally, the plurality of modular microwave sources may include an array of microwave amplification modules. In an embodiment, each microwave amplification module may be coupled to at least one of the applicators in the array of applicators. According to an embodiment, the dielectric body be planar, non-planar, symmetric, or non-symmetric. In yet another embodiment, the dielectric body may include a plurality of recesses. In such an embodiment, at least one applicator may be positioned in at least one of the recesses.

Symmetric and irregular shaped plasmas using modular microwave sources

Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precursor into the remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the first fluorine-containing precursor and the sulfur-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.

Isotropic silicon nitride removal

Embodiments disclosed herein include methods and apparatuses used to deposit graphene layers. In an embodiment, a method of depositing a graphene layer on a substrate comprises providing a substrate within a modular microwave plasma chamber, and flowing a carbon source and a hydrogen source into the modular microwave plasma chamber. In an embodiment, the method further comprises striking a plasma in the modular microwave plasma chamber, where a substrate temperature is below approximately 400° C., and depositing the graphene layer on the substrate.

Method and apparatus of low temperature plasma enhanced chemical vapor deposition of graphene

A method and apparatus for biasing regions of a substrate in a plasma assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

Substrate support with multiple embedded electrodes

Embodiments disclosed herein include a housing for a source array. In an embodiment, the housing comprises a conductive body, where the conductive body comprises a first surface and a second surface opposite from the first surface. In an embodiment a plurality of openings are formed through the conductive body and a channel is disposed into the second surface of the conductive body. In an embodiment, a cover is over the channel, and the cover comprises first holes that pass through a thickness of the cover. In an embodiment, the housing further comprises a second hole through a thickness of the conductive body. In an embodiment, the second hole intersects with the channel.

Monolithic modular microwave source with integrated process gas distribution

Embodiments disclosed herein include a housing for a source assembly. In an embodiment, the housing comprises a conductive body with a first surface and a second surface opposite from the first surface, and a plurality of openings through a thickness of the conductive body between the first surface and the second surface. In an embodiment, the housing further comprises a channel into the first surface of the conductive body, and a cover over the channel. In an embodiment, a first stem over the cover extends away from the first surface, and a second stem over the cover extends away from the first surface. In an embodiment, the first stem and the second stem open into the channel.

Monolithic modular microwave source with integrated temperature control

Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises and oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.

Modular high-frequency source

Embodiments includes methods for forming a silicon nitride film on a substrate in a deposition chamber. In embodiments, the substrate is sequentially exposed to a sequence of processing gases, comprising: a silicon halide precursor that absorbs onto a surface of the substrate to form an absorbed layer of the silicon halide, a first reacting gas that includes Nand one or both of Ar and He, and a second reacting gas comprising a hydrogen-containing gas and one or more of Ar, He, and N. In embodiments, the hydrogen-containing gas includes at least one of H(molecular hydrogen), NH(ammonia), NH(diazene), NH(hydrazine), and HN(hydrogen azide). Embodiments may include repeating the sequence until a desired thickness of the silicon nitride film is obtained.

Method of forming silicon nitride films using microwave plasma

Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.

Modular microwave source with local lorentz force

Embodiments disclosed herein include a source for a processing tool. In an embodiment, the source comprises a dielectric plate having a first surface and a second surface opposite from the first surface, and a cavity into the first surface of the dielectric plate. In an embodiment, the cavity comprises a third surface that is between the first surface and the second surface. In an embodiment, the source further comprises a dielectric resonator extending away from the third surface.

Modular microwave source with embedded ground surface

Embodiments described herein include an applicator frame for a processing chamber. In an embodiment, the applicator frame comprises a first major surface of the applicator frame and a second major surface of the applicator frame opposite the first major surface. In an embodiment, the applicator frame further comprises a through hole, wherein the through hole extends entirely through the applicator frame. In an embodiment, the applicator frame also comprises a lateral channel embedded in the applicator frame. In an embodiment the lateral channel intersects the through hole.

Modular high-frequency source with integrated gas distribution

Growing community of inventors

Cupertino, CA, United States of America

Thai Cheng Chua