The Boeing Company

Hrl Laboratories, LLC

Thaddeus D Ladd

Danny M Kim

Daniel Yap

Rongming Chu

Yu Cao

Shuoqin Wang

Brett Yurash

Ivan Alvarado

Samuel J Whiteley

Edward H Chen

Biqin Huang

Andrey A Kiselev

An optical waveguide structure comprises a nonlinear optical waveguide, a set of tuning optical waveguides, a set of wavelength selective couplers that couples light between the nonlinear optical waveguide and one or more tuning optical waveguides in the set of tuning optical waveguide based on a wavelength of light, and a set of phase shifters located along one or more tuning optical waveguides in the set of tuning optical waveguides.

Optical waveguide structure with partially overlapping loops in direction dependent material

A semiconductor structure comprises a substrate; an oxide layer on the substrate; a set of group III nitride layers on the oxide layer; and a set of silicon carbide layers located on the set of group III nitride layers.

Silicon carbide and nitride structures on a substrate

A method, apparatus, and system for non-linear optical process. A first light of a first wavelength is routed in a first loop in a main nonlinear optical waveguide. The first loop has a first length for the first light of the first wavelength. A second light of a second wavelength is routed in a second loop that includes portions of the main nonlinear optical waveguide and a first extension optical waveguide. The second loop has a second length for the second light of the second wavelength. A third light of a third wavelength is routed in a third loop that include portions of the main nonlinear optical waveguide and a second extension optical waveguide. The third loop has a third length for the third light of the third wavelength.

Optical waveguide structure with triple partially overlapping loops

An optical waveguide structure comprises a nonlinear optical waveguide comprising a nonlinear optical material having a second order nonlinear coefficient that changes with a direction of light propagation. A first portion of the nonlinear optical waveguide in which a light propagating through the first portion is affected by a positive value of a second order nonlinear coefficient. A second portion of the nonlinear optical waveguide in which the light propagating through the first portion is affected by a negative value of a second order nonlinear coefficient, wherein a set of dimensions in the nonlinear optical waveguide in the first portion and the second portion is selected to cause the light to have a phase walk-off that is an odd multiple of 180 degrees.

Directional phase matching optical waveguide

A method, apparatus, and system for forming a semiconductor structure. A first oxide layer located on a set of group III nitride layers formed on a silicon carbide substrate is bonded to a second oxide layer located on a carrier substrate to form an oxide layer located between the carrier substrate and the set of group III nitride layers. The silicon carbide substrate has a doped layer. The silicon carbide substrate having the doped layer is etched using a photo-electrochemical etching process, wherein a doping level of the doped layer is such that the doped layer is removed and a silicon carbide layer in the silicon carbide substrate remains unetched. The semiconductor structure is formed using the silicon carbide layer and the set of group III nitride layers.

Fabricating a silicon carbide and nitride structures on a carrier substrate

Methods of in situ fabrication and formation of horizontal nanowires for a semiconductor device employ non-catalytic selective area epitaxial growth to selectively grow a semiconductor material in a selective area opening of predefined asymmetrical geometry. The selective area opening is defined in a dielectric layer to expose a semiconductor layer underlying the dielectric layer. The non-catalytic selective area epitaxial growth is performed at a growth temperature sufficient to also in situ form a linear stress crack of nanoscale width that is nucleated from a location in a vicinity of the selective area opening and that propagates in a uniform direction along a crystal plane of the semiconductor layer in both the semiconductor layer and the dielectric layer as a linear nanogap template. The semiconductor material is further selectively grown to fill the linear nanogap template to in situ form the nanowire that is uniformly linear.

In situ fabrication of horizontal nanowires and device using same

Semiconductor device having in situ formed horizontal nanowire structure

A device for storing and/or transferring quantum data. The device has a plurality of elongate semiconductor structures arranged in side by said with each elongate semiconductor structure having a quantum well layer of one semiconductor material disposed between upper and lower layers of a different semiconductor material which share the same or essentially the same crystalline structure as that of the quantum well layer. Neighboring ones of the elongate semiconductor structures share a region forming a constriction between the neighboring ones of the elongate semiconductor structures. Also disclosed is a a method of adjusting exchange coupling between laterally coupled quantum wells in a quantum device having sidewalls, the method including: defining the sidewalls by etching a crystalline structure along lattice planes of said crystalline structure, the crystalline structure, after the sidewalls are etched, having a corrugated shaped with protuberances and grooves on opposing major surfaces thereof, and controlling a ratio of the distances (i) between opposing grooves on the opposing major surfaces of the crystalline structure and (ii) between opposing protuberances on the opposing major surfaces of the crystalline structure.

Etched spin-qubit for high temperature operation

A multi-channel free-space optical wavelength division multiplexing system for optical quantum communication includes a transmitter configured to encode an input signal into a weak optical signal carrying quantum information, and to transmit the weak optical signal over a plurality of frequency channels in free space, each of the plurality of frequency channels corresponding to a plurality of photons of the weak optical signal, and a receiver configured to receive and decode the weak optical signal.

Growing community of inventors

Woodland Hills, CA, United States of America

Thaddeus D Ladd