Mapper Lithography IP B.v.

Asml Netherlands B.v.

Teunis Van De Peut

Marco Jan-Jaco Wieland

Henk Derks

Ralph Van Melle

Guido De Boer

Edwin Johannes Theodorus Smulders

Frederik Matthias Spiegelhalder

Roy Josephus Stephanus Derks

Stijn Willem Herman Karel Steenbrink

Alexander Hendrik Vincent Van Veen

Remco Jager

Floris Pepijn Van Der Wilt

Ernst Habekotte

Hendrik Den Boer

Marco Jan-Jaco Weiland

A method for forming an optical fiber array. A substrate having a first surface and an opposing second surface is provided. The substrate is provided with a plurality of apertures extending through the substrate from the first surface to the second surface. In addition, a plurality of fibers are provided. The fibers have fiber ends with a diameter smaller than the smallest diameter of the apertures. A first fiber is inserted in a first corresponding aperture, from the first surface side of the substrate, such that the fiber end is positioned in close proximity of the second surface. The inserted first fiber is bent in a predetermined direction such that the fiber abuts a side wall of the first aperture at a predetermined position. After the first fiber is bent, a second fiber is inserted in a second corresponding aperture, from the first surface side of the substrate, such that the fiber end is positioned in close proximity of the second surface. The inserted second fiber is bent in conformity with a shape of the first fiber, such that the fiber abuts a side wall of the second aperture at a predetermined position. The bent fibers are bonded together using an adhesive material.

Method for forming an optical fiber array

A method for exposing a wafer in a charged particle lithography system. The method comprises generating a plurality of charged particle beamlets, the beamlets arranged in groups, each group comprising an array of beamlets; moving the wafer under the beamlets in a first direction at a wafer scan speed; deflecting the beamlets in a second direction substantially perpendicular to the first direction at a deflection scan speed, and adjusting the deflection scan speed to adjust a dose imparted by the beamlets on the wafer.

Deflection scan speed adjustment during charged particle exposure

A charged particle lithography system for exposing a wafer according to pattern data. The system comprises an electron optical column for generating a plurality of electron beamlets for exposing the wafer, the electron optical column including a beamlet blanker array for switching the beamlets on or off, a data path for transmitting beamlet control data for control of the switching of the beamlets, and a wafer positioning system for moving the wafer under the electron optical column in a scan direction. The wafer positioning system is provided with synchronization signals from the data path to align the wafer with the electron beams from the electron-optical column. The data path further comprises one or more processing units for generating the beamlet control data and one or more transmission channels for transmitting the beamlet control data to the beamlet blanker array.

Charged particle lithography system

A method for exposing a wafer according to pattern data using a charged particle lithography machine generating a plurality of charged particle beamlets for exposing the wafer. The method comprises providing the pattern data in a vector format, rendering the vector pattern data to generate multi-level pattern data, dithering the multi-level pattern data to generate two-level pattern data, supplying the two-level pattern data to the charged particle lithography machine, and switching on and off the beamlets generated by the charged particle lithography machine on the basis of the two-level pattern data, wherein the pattern data is adjusted on the basis of corrective data.

Method for exposing a wafer

A method for exposing a wafer using a plurality of charged particle beamlets. The method comprises identifying non-functional beamlets among the beamlets, allocating a first subset of the beamlets for exposing a first portion of the wafer, the first subset excluding the identified non-functional beamlets, performing a first scan for exposing the first portion of the wafer using the first subset of the beamlets, allocating a second subset of the beamlets for exposing a second portion of the wafer, the second subset also excluding the identified non-functional beamlets, and performing a second scan for exposing the second portion of the wafer using the second subset of the beamlets, wherein the first and second portions of the wafer do not overlap and together comprise the complete area of the wafer to be exposed.

Dual pass scanning

The invention relates to a modulation device for modulating charged particle beamlets in accordance with pattern data in a multi-beamlet charged particle lithography system. The device comprises a plate-like body, an array of beamlet deflectors, a plurality of power supply terminals (-) for supplying at least two different voltages, a plurality of control circuits, and a conductive slab () for supplying electrical power to one or more of the power supply terminals (-). The plate-like body is divided into an elongated beam area () and an elongated non-beam area () positioned with their long edges adjacent to each other. The beamlet deflectors are located in the beam area. The control circuits are located in non-beam area. The conductive slab is connected to the control circuits in the non-beam area. The conductive slab comprises a plurality of thin conductive plates (-).

Modulation device and power supply arrangement

The invention relates to a maskless lithography system for patterning a target using a plurality of charged particle beamlets. The system comprises an electron optical column including a blanker array for modulating the beamlets. The blanker array includes receivers for receiving data signals and blanker elements for modulating the beamlets in accordance with the data signals. The system further comprises a data path comprising a preprocessing system for processing pattern data and a plurality of transmission channels for transmitting processed pattern data to the blanker elements. The data path further comprises a pattern streaming system for receiving pattern data and generating data signals. First and second channel selectors connect a subset of selected transmission channels for pattern data transmission. The first channel selector is connected between the preprocessing system and the transmission channels. The second channel selector is connected between the channels and the blanker elements.

Data path for lithography apparatus

The invention relates to a charged-particle multi-beamlet lithography system for transferring a pattern onto the surface of a target. The system comprises a beam generator for generating a plurality of charged particle beamlets, a beamlet blanker array for patterning the beamlets in accordance with a pattern, and a projection system for projecting the patterned beamlets onto the target surface. The blanker array comprises a plurality of modulators and a plurality of light sensitive elements. The light sensitive elements are arranged to receive pattern data carrying light beams and to convert the light beams into electrical signals. The light sensitive elements are electrically connected to one or more modulators for providing the received pattern data. The blanker array is coupled to a fiber fixation substrate which accommodates end sections of a plurality of fibers for providing pattern data carrying light beams as an assembled group with a fixed connection.

Lithography system, modulation device and method of manufacturing a fiber fixation substrate

A method of forming an optical fiber array. The method comprises providing a substrate having a first surface and an opposing second surface. The substrate is provided with a plurality of apertures extending through the substrate from the first surface to the second surface. Additionally, a plurality of fibers is provided. The fibers have fiber ends with a diameter smaller than the smallest diameter of the apertures. For each fiber, from the first surface side of the substrate, the fiber is inserted in a corresponding aperture such that the fiber end is positioned in close proximity of the second surface. Then the fiber is bent in a predetermined direction such that the fiber abuts a side wall of the aperture at a predetermined position. Finally, the bent fibers are bonded together using an adhesive material.

Arrangement of optical fibers, and a method of forming such arrangement

The invention relates to a charged-particle multi-beamlet lithography system. The system comprises a beam generator for generating a plurality of beamlets, a beamlet blanker array for patterning the plurality of beamlets, an optical fiber arrangement, and a projection system. The beamlet blanker array comprises a substrate provided with a first area comprising one or more modulators and a second area free of modulators. The beamlet blanker array comprises one or more light sensitive elements, electrically connected to the one or more modulators, and arranged to receive light beams carrying pattern data. The optical fiber arrangement comprises a plurality of optical fibers for guiding the light beams carrying pattern data towards the one or more light sensitive elements. The projection of the optical fiber arrangement onto a surface of the beamlet blanker array in a direction perpendicular to the surface falls entirely within the second area.

Modulation device and charged particle multi-beamlet lithography system using the same

A maskless charged particle lithography system comprises an electron-optical column and a data path. The column includes a blanker array including blanker elements. The data path comprises a preprocessing system, transmission channels, and a pattern streaming system. The lithography system is configured for exposing a target field in two passes by allocating a first beamlet subset for exposing a first field subset during a first pass and a second beamlet subset for exposing a second field subset during a second pass. A first beam selector selects a first pattern data subset containing exposure data for the first beamlet subset and a second pattern data subset containing exposure data for the second beamlet subset. Second beam selectors connect transmission channels assigned for transmitting the first pattern data subset to a first blanker elements subset, and transmission channels assigned for transmitting the second pattern data subset to a second blanker elements subset.

A method and system for exposing a target according to pattern data in a maskless lithography machine generating a plurality of exposure beamlets for exposing the target. The method comprises providing input pattern data in a vector format, rendering and quantizing the input pattern data to generate intermediate pattern data, and re-sampling and re-quantizing the intermediate pattern data to generate output pattern data. The output pattern data is supplied to the lithography machine, and the beamlets generated by the lithography machine are modulated on the basis of the output pattern data.

Pattern data conversion for lithography system

The invention relates to a charged particle lithography system comprising a beam generator for generating a plurality of charged particle beamlets, a beam stop array and a modulation device. The beam stop array has a surface for blocking beamlets from reaching a target surface and an aperture array in the surface for allowing beamlets to reach the target surface. The modulation device is arranged for modulating the beamlets by deflecting or not deflecting the beamlets so that the beamlets are blocked or not blocked by the beam stop array. A surface area of the modulation device comprises an elongated beam area comprising an array of apertures and associated modulators, and a power interface area for accommodating a power arrangement for powering elements within the modulation device. The power interface area is located alongside a long side of the elongated beam area and extending in a direction substantially parallel thereto.

Charged particle beam modulator

The invention relates to a method of generating a two-level pattern for lithographic processing by multiple beamlets. In the method, first a pattern in vector format is provided. The vector format pattern is then converted into a pattern in pixmap format. Finally, a two-level pattern is formed by application of error diffusion on the pixmap format pattern.

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Leusden, Netherlands

Teunis Van De Peut