Sharp Kabushiki Kaisha Corporation

Tetsuzo Nagahisa

Masaru Kubo

John Kevin Twynam

Shinichi Handa

Norihisa Fujii

A heterojunction field effect transistor includes a first contact portion and a second contact portion. A length of the first contact portion in a longitudinal direction is smaller than a length of source electrodes in the longitudinal direction, and a length of the second contact portion in the longitudinal direction is smaller than a length of drain electrodes in the longitudinal direction. For each drain electrode, a distance from ends of the second contact portion to ends of the drain electrode, the ends being outside of the second contact portion, is greater than a distance from ends of the first contact portion to ends of the source electrode, the ends being outside of the first contact portion.

Heterojunction field effect transistor

In a field effect transistor, a carbon concentration in a buffer layer at the side closer to a high resistance layer is not less than 0.8&#xd7;10/cmand not more than 1.0&#xd7;10/cm, a carbon concentration in the high resistance layer at the side closer to the buffer layer is not less than 3.7&#xd7;10/cmand not more than 1.0&#xd7;10/cm, and a carbon concentration in the high resistance layer at the side closer to the channel layer is not less than 1.4&#xd7;10/cmand not more than 1.0&#xd7;10/cm.

Field effect transistor

A field-effect transistor provided with a substrate, a channel layer, a carrier supply layer, a source electrode, a drain electrode, a gate electrode, a first insulating layer that is laminated on the carrier supply layer between the source electrode and the drain electrode, and suppresses current collapse, an opening that is formed between an edge of the first insulating layer opposing the drain electrode and the drain electrode, and a second insulating layer that is laminated on the carrier supply layer exposed in the opening.

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Osaka, Japan

Tetsuzo Nagahisa