Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Tetsuyuki Okano

Nobuhiko Hojo

Hajime Nishino

Akira Kano

Satoshi Shibata

Takayuki Nakatsutsumi

Junko Matsushita

Fumitoshi Kawase

Hisako Kamiyanagi

Mayumi Maenishi

Masahiro Takahata

A negative-electrode active material comprises a graphite including boron and nitrogen. A ratio R1 satisfies 0.5&#x2264;R1&#x2264;1, where R1=S/S, and Sdenotes a total peak area of a boronspectrum of the graphite obtained by X-ray photoelectron spectroscopy, and Sdenotes a peak area of a spectrum assigned to boron bonded to nitrogen in the boronspectrum. A ratio R2 satisfies 0&#x3c;R2&#x2264;0.05, where R2=S/(S+S+S), and Sdenotes a peak area of a carbonspectrum of the graphite obtained by X-ray photoelectron spectroscopy, and Sdenotes a peak area of a nitrogenspectrum of the graphite obtained by X-ray photoelectron spectroscopy.

Negative-electrode active material for non-aqueous secondary battery and non-aqueous secondary battery

Protons are entered into a substrate to be analyzed at a proton incident angle larger than 0&#xb0; and smaller 90&#xb0;. Excited by the entered protons and emitted from the substrate to be analyzed, the characteristic X-ray is measured by an energy dispersive X-ray detector and the like. Impurity elements present in the substrate to be analyzed are identified based on the measured characteristic X-ray. The in-plane distribution in the substrate can be obtained by scanning the proton beam. The in-depth distribution can be obtained by entering protons at different proton incident angles. The elemental analysis method can be applied to semiconductor device manufacturing processes to analyze metal contamination or quantify a conductivity determining impurity element on an inline basis and with a high degree of accuracy.

Elemental analysis method and semiconductor device manufacturing method

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Osaka, Japan

Tetsuyuki Okano