Matsushita Electric Industrial Co., Ltd.

Tetsuyosi Ogura

Yutaka Taguchi

Hideki Iwaki

Hiroki Sato

Keiji Onishi

Kazuo Eda

Yoshihiro Bessho

Yasuhiro Sugaya

Toshiyuki Asahi

Osamu Kawasaki

Akihiko Namba

Tousaku Nishiyama

Shun-ichi Seki

Yukihiro Fukumoto

Yosihiro Tomita

Yoshinobu Idogawa

A semiconductor built-in millimeter-wave band module includes: an insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin; a high thermal conductivity substrate made of a dielectric material having thermal conductivity higher than the insulating substrate and laminated on one surface of the insulating substrate; a plurality of wiring patterns formed on the high thermal conductivity substrate and the insulating substrate; a semiconductor device operating at millimeter-wave band, which is arranged inside of the insulating substrate, is packaged on the high thermal conductivity substrate in a face-up manner, and is connected electrically with the wiring patterns; and a distributed constant circuit element and an active element provided on the semiconductor device. In this module, a void is provided inside of the insulating substrate and in the vicinity of a surface of the distributed constant circuit element and the active element. With this configuration, heat from the semiconductor device operating at a millimeter-wave band can be dissipated effectively and the semiconductor and other circuit components can be packaged with high density.

Semiconductor built-in millimeter-wave band module

An optical module of the present invention is provided with a substrate that includes an insulating layer, a passive element provided inside or on the surface of the insulating layer, and terminal electrodes formed on the surface of the insulating layer, and with at least one active element, which includes at least an optical element and is connected to the terminal electrodes on the substrate surface. The passive element has a dielectric layer, a resistive layer, or a magnetic layer, at least one of the terminal electrodes is connected to the passive element, and at least one of the at least one active element has a protruding electrode and is flip-chip mounted to the terminal electrodes on a principle face of the substrate via the protruding electrode. Taking a plane parallel to the principle face of the substrate as a projection plane, then an area of orthographic projection of the dielectric layer, the resistive layer, or the magnetic layer is smaller than an area of orthographic projection of the principle face of the substrate, and the dielectric layer, the resistive layer, or the magnetic layer is formed such that the orthographic projection, with respect to the projection plane, of all the protruding electrodes of the at least one active element that is flip-chip mounted to the principle face of the substrate is included in the orthographic projection of the dielectric layer, the resistive layer, or the magnetic layer. Thus, the optical module has good high frequency properties and the optical element can be mounted stably onto the substrate.

Optical module

A first bump and a second bump are formed on the surface of a mounting board (substrate) so that the second bump is allowed to be higher than the first bump. A conductive adhesive member is transferred onto those bumps. A semiconductor substrate in which a mesa portion has been processed is mounted on the mounting board so that the first bump does not come into contact with an electrode on a top of the mesa portion directly while electrically connected to the electrode via the conductive adhesive member. In the semiconductor device in which the semiconductor substrate is mounted with an active surface processed to form the mesa portion facing the mounting board, the stresses applied to the mesa portion (a stress caused in mounting and a stress due to a heat cycle in use) are relieved, thus preventing deterioration of an element.

Semiconductor device and method of manufacturing the same

The semiconductor package of this invention includes: a semiconductor element having a power supply terminal, a ground terminal, and an output terminal; an inductance; and a capacitance. One of opposing terminals of the capacitance is connected to the power supply terminal of the semiconductor element, and the other terminal is connected to the ground terminal of the semiconductor element. The ground terminal of the semiconductor element is connected to a ground terminal of the semiconductor package, the power supply terminal of the semiconductor element is connected to a power supply terminal of the semiconductor package via the inductance, and the output terminal of the semiconductor element is connected to an output terminal of the semiconductor package.

Electric circuit and package for semiconductor

A surface acoustic wave device has a main substrate; a comb-like electrode formed on one of the main surfaces of said main substrate; and a supplementary substrate joined with the other main surface of said main substrate, wherein said supplementary substrate has a smaller thermal expansion coefficient and a larger thickness than said main substrate.

Surface acoustic wave devices and their manufacturing method

Growing community of inventors

Settsu, Japan

Tetsuyosi Ogura