Sharp Kabushiki Kaisha Corporation

Tetsuyoshi Inoue

Kazunori Matsubara

Hajime Horinaka

Yoshihisa Dotta

Liumin Zou

Ayumi Yagi

Hisayuki Shinohara

Yuhsuke Fukuoka

Hiromasa Tanamura

Kiyotaka Sakurai

Kohichi Katohno

Mitsuji Gotoh

Shohichi Ohyama

Wires () electrically connecting solar cells () include first wires () and second wires (). The first wires () are connected to the first-conductivity-type electrodes () of a first one of the solar cells () and the second-conductivity-type electrodes () of a second one of the solar cellsthat is adjacent to the first one of the solar cells (). The second wires () are connected to the second-conductivity-type electrodes () of the first one of the solar cells () and the first-conductivity-type electrodes () of the second one of the solar cells (). The second wires () are electrically separated by holes () extending through both the second wires () and an insulating base member ().

Solar cell module, wiring sheet, and method of manufacturing wiring sheet

By increasing a pressure in a chamber flange () at a predetermined rate, the number of gas molecules that carry inner thermal energy is increased, which results in a uniform temperature distribution. Thus, non-melting residues of, air bubbles in, and insufficient expansion of the sealing resin () are reduced. After removal of the air bubbles (), a pressure is applied between a substrate () and a sealing substrate (), thereby the substrate (), a solar cell (), the sealing resin () and the sealing substrate () are adhered to each other.

Method for manufacturing solar cell module and laminator

A semiconductor laser device includes a package having a front surface, a rear surface and an outer peripheral surface; a semiconductor laser element and a light receiving element provided on the front surface; a plurality of leads arranged in spaced relation on the front surface as extending outward from the package; and an optical element supported above the front surface with its optical axis perpendicular to the front surface for guiding a laser beam emitted from the semiconductor laser element toward an object and guiding light reflected on the object to the light receiving element; wherein the outer peripheral surface is configured so as to be fitted in a cylindrical hole having an axis parallel to the optical axis of the optical element, and has a recess extending from the front surface to the rear surface, and the leads are bent as extending from the front surface and passing through the recess with distal portions thereof extending along the optical axis of the optical element and with proximal ends thereof electrically connected to the semiconductor laser element and the light receiving element.

Semiconductor laser device with light receiving element

The present invention provides a semiconductor laser device of which reliability is enhanced. In the semiconductor laser device of the present invention, a semiconductor laser elementemitting laser light in a plane direction, a reflection mirrorreflecting the laser light in an upper direction and a light acceptance unitdetecting signal of incident laser light are disposed inside an insulative frame. A plurality of leadsextending in a horizontal direction are fixed in the end wallsopposed to each other in the longitudinal direction of the insulative frame. The insulative frameis made of liquid crystal polymer.

Semiconductor laser device

Silver paste is applied to a stem, and a semiconductor laser chip is mounted onto the stem on which the silver paste has been applied. Next, the semiconductor laser chip mounted on the stem, while kept pressurized toward the stem with a collet, is heated to make the silver paste temporarily cured, by which the semiconductor laser chip is fixed onto the stem. Then, after a temporary curing step, the silver paste is finally cured within a thermostat. The semiconductor laser device thus manufactured is low in thermal resistance and reduced in variations of operating current and prevented from short-circuiting of the semiconductor laser chip.

Semiconductor laser manufacturing method and semiconductor laser

In a semiconductor laser device, a plane of polarization of a laser beam emitted by a semiconductor laser () is inclined from a substrate surface (A), allowing the semiconductor laser () to be higher in power and higher in reliability. Moreover, a die-bond surface () of this semiconductor laser () is inclined by a specified inclination angle &#x3b8; with respect to the reference surface () of the stem body (), so that the plane of polarization of the laser beam can be made generally parallel to the reference surface () of the stem body (). Thus, there can be provided a semiconductor laser device which is capable of contributing to a thinning of an optical pickup device and easy to manufacture.

Growing community of inventors

Yamatotakada, Japan

Tetsuyoshi Inoue