Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho

Air Products and Chemicals, Inc.

Dainippon Screen Mfg. Co., Ltd.

Tetsuya Yoshikawa

Yasuhiko Fujieda

Katsuyuki Iijima

Kaoru Masuda

Takao Fujikawa

Kimitsugu Saito

Takahiko Ishii

Yoshihiko Sakashita

Yusuke Muraoka

Katsumi Watanabe

Takashi Onishi

Takehiko Wakazono

Yoichi Inoue

Hideo Fujii

Shogo Sarumaru

Tomomi Iwata

Masao Murakami

Masahiro Yamagata

Ikuo Mizobata

Koichi Honke

Jun Munemasa

Tatsuya Yasunaga

Yu Sumimoto

Toshikatsu Nonaka

Glen R Thompson

Darry W Peters

Hakumi Hasegawa

To effectively suppress a shift of a rotating axis of an upper chuck with respect to a rotating axis of a lower chuck due to a separating force. A tire testing device () includes: vertical frames () which are supported by a lower frame (); a beam () which bridges between the vertical frames () and is movable in the vertical direction; an upper chuck () which is attached to the center of the beam (), the center corresponding to the center of the beam in the longitudinal direction; and a lower chuck () which is attached to the lower frame. When viewed from the vertical direction, a rotating axis of an upper rotating member () is positioned at the center of a straight line formed by connecting supporting points where each of the vertical frames () support the beam ().

Tire testing device

A tire testing machine according to the present invention, which can measure both uniformity and dynamic balance of a tire T, comprises a spindle for driving the tire T to rotate about a vertical axis, a spindle housing which supports the spindle rotatably, and a rotating drum rotatable about an axis parallel to an axis of the spindle and movable toward and away from the tire T. The spindle housing is fixed to a base through a piezoelectric sensor so that it can bear a pressing force provided from the rotating drum. The piezoelectric sensor is disposed within a plane including the axis of the spindle and perpendicular to the pressing force. With this structure, dynamic balance of the tire can be measured accurately and easily.

Tire testing machine and tire testing method

Provided is a tire testing machine capable of measuring a force generated in a tire with high precision. The tire testing machine includes a spindle shaft () for holding a tire (T), a housing () for rotatably supporting the spindle shaft () through a rolling bearing (), a running device () having a surface rotated by rotational driving and imparting a rotational force to a tire contacting the surface, and a measurement device () which is provided in the housing () and measures a force and moment generated in the spindle shaft () when the tire (T) is running. Furthermore, the tire testing machine includes a torque canceller () for preventing the spindle shaft () from such an impact that rotational friction torque (My) generated by rotational friction, which is received by the spindle shaft () in the housing when the spindle shaft () rotates, is imparted onto the shaft (). The torque canceller () is equipped with a motor () for the spindle shaft, which imparts a torque for cancelling the impact of the rotational friction torque (My) to the spindle shaft ().

Tire testing machine and method for testing tire

An object is subjected to high-pressure processing by bringing at least a high-pressure fluid into contact with the object under pressure in a high-pressure processing chamber, and then the high-pressure processing chamber is depressurized while the temperature in the chamber is controlled to be maintained above a temperature achieved by an adiabatic expansion, the adiabatic expansion starting from the pressure and temperature at the end of the high-pressure processing step. To control in such a way, the temperature in the high-pressure processing chamber is controlled so as to suppress or recover a temperature descent caused by an adiabatic expansion during the depressurizing step. This solves a problem in which the temperature is decreased to the vapor-liquid phase coexistence region or a region in which a solid is deposited.

Method for high-pressure processing

Disclosed is a high pressure processing method for subjecting a processing object to a high pressure processing using a high pressure fluid. In this method, the high pressure fluid is brought into collision with the surface of the processing object placed in a high pressure processing chamber, and then distributed along the surface of the processing object in an outward direction beyond the processing object.

High pressure processing method and apparatus

Cu-based interconnections are fabricated in a semiconductor device by depositing a thin film of Cu or Cu alloy on a dielectric film by sputtering, the dielectric film having trenches and/or via holes at least one groove and being arranged on or above a substrate, and carrying out high temperature and high pressure treatment to thereby embed the Cu or Cu alloy into the trenches and/or via holes, in which the sputtering is carried out at a substrate temperature of &#x2212;20&#xb0; C. to 0&#xb0; C. using, as a sputtering gas, a gaseous mixture containing hydrogen gas and an inert gas in a ratio in percentage of 5:95 to 20:80.

Method for fabricating copper-based interconnections for semiconductor device

A process for removing residues from the microstructure of an object is provided, which comprises steps of preparing a remover including carbon dioxide, an additive for removing the residues and a co-solvent dissolving the additive in said carbon dioxide at a pressurized fluid condition; and bringing the object into contact with the remover so as to remove the residues from the object. A composition for removing residues from the microstructure of an object is also provided.

Process and composition for removing residues from the microstructure of an object

A temporary support layeris formed on a semiconductor substrateand the temporary support layeris provided with a holethat reaches the semiconductor substrateThe holeis filled in with a conductor materialand by pressurizing the conductor materialthe conductor materialand the semiconductor substrateare pressure-bonded. Thereby, an aerial wiring structure whose bonding strength is improved and that has excellent self-sustainability can be obtained.

Method for forming aerial metallic wiring on semiconductor substrate

A vacuum arc deposition device having electrode switching means comprising two or more electrodes consisting of vacuum arc vapor evaporation source materials and a substrate to which films are formed by means of vacuum arc vapor deposition, each of the electrodes and the substrate being contained in a vacuum chamber capable of introducing a reactive gas, wherein the electrodes are connected to arc discharging DC power supplies by way of polarity switching means so that each of the electrodes functions as a cathode and an anode alternately. Films, in particular, of insulative property can stably be vapor deposited on a substrate for a long period of time continuously.

Vacuum arc vapor deposition device having electrode switching means

Growing community of inventors

Takasago, Japan

Tetsuya Yoshikawa