Nippon Mining & Metals Co., Ltd.

Rohm Co., Ltd.

Kochi University of Technology

Asahi Kasei Kogyo Kabushiki Kaisha

Sumitomo Heavy Industries, Ltd.

Sekisui Chemical Co., Ltd.

Lintec Corporation

Japan Science and Technology Corporation

Tetsuya Yamamoto

Kenji Sato

Toshiaki Asahi

Atsutoshi Arakawa

Hiroshi Yoshida

Ken Nakahara

Takeshi Kondo

Juichi Fukatani

Satoshi Naganawa

Yumiko Amino

Koichi Nagamoto

Bungo Hatta

Toshiyuki Sakemi

Takafumi Yao

Takayuki Watanabe

Takahiro Yamada

Hisashi Kitami

A c/o Nikko Materials Co Ltd Toda Pt Arakawa

K c/o Nikko Materials Co Ltd Toda Plant Sato

T c/o Nikko Materials Co Ltd Toda Plant Asahi

Provided is a negative ion irradiation device in which an object is irradiated with a negative ion. The device includes a chamber that allows the negative ion to be generated therein, a gas supply unit that supplies a gas which is a raw material for the negative ion, a plasma generating portion that generates plasma, a voltage applying unit that applies a voltage to the object, a control unit that performs control of the gas supply unit, the plasma generating portion, and the voltage applying unit. The control unit controls the gas supply unit to supply the gas into the chamber, controls the plasma generating portion to generate the plasma in the chamber and to generate the negative ion by stopping the generation of the plasma, and controls the voltage applying unit to start voltage application during plasma generation and to continue voltage application after plasma generation stop.

Negative ion irradiation device

A zinc-oxide-based conductive stacked structureincludes a substrateand, formed on at least one surface of the substrate, an undercoat layerand a transparent conductive film. The transparent conductive film is formed of a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material and has a carrier density of 2.0&#xd7;10to 9.8&#xd7;10cm. The zinc-oxide-based conductive stacked structure exhibits a change ratio in sheet resistivity of 50 or less, after bending of the stacked structure around a round bar having a diameter of 15 mm, with the transparent conductive film facing inward.

Zinc oxide-based conductive multilayer structure, process for producing the same, and electronic device

The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystal

A gallium containing zinc oxide with an improved heat ray shielding function while keeping high transparency to visible light rays is provided. A gallium containing zinc oxide, which has a heat ray shielding function, a gallium content in the range of 0.25 to 25 % by weight, and a carrier electron density nof 2&#xd7;10/ cmor higher.

Gallium containing zinc oxide

Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device

The present invention provides a low-resistivity p-type single-crystal zinc oxide. An n-type dopant and p-type dopant are doped into zinc oxide with higher concentration of the p-type dopant than that of the n-type dopant during forming a single-crystal of the zinc oxide through a thin film forming process. Further, an element of the second group is co-doped to allow oxygen to be stabilized.

P-type single crystal zinc-oxide having low resistivity and method for preparation thereof

An n-type dopant of at least one of elements of Group III such as Ga and the like and a p-type dopant of at least one of elements of Group V such as N and the like are doped to a ZnO crystalline layer as dopants, and the n-type dopant is more than the p-type dopant and doped into the ZnO layer in an impurity concentration of 1&times;10 cm or more. Therefore, it is possible to lower the resistivity of the ZnO layer with a degree of the transparency high and to obtain the transparent conductive film of zinc oxide having the electrical resistivity lower than ITO.

Transparent conductive film of zinc oxide

A p-type ZnO single crystal having a low resistance; and a method for producing the same providing a substrate ( ) in a vacuum chamber ( ), supplying to the substrate ( ) atomic gases of Zn, O, and N (p-type dopant) and Ga (n-type dopant) in a manner wherein the feeds of N and Ga are controlled in such a manner that the ratio of N:Ga in a crystal is 2:1, and thereby growing a p-type ZnO single crystal containing N and Ga.

P-type ZnO single crystal and method for producing the same

p-type semiconductor, method for manufacturing the p-type semiconductor,

Growing community of inventors

Kochi, Japan

Tetsuya Yamamoto