Nippon Shokubai Co., Ltd.

Mitsubishi Heavy Industries Limited

Mitsubishi Cable Industries, Ltd.

Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Murata Kikai Kabushiki Kaisha

Tetsuya Yamamoto

Takuya Kamiyama

Yasutaka Nakatani

Teruhiko Kumada

Hideharu Nobutoki

Naoki Yasuda

Hiroko Harada

Hiroshi Uchida

Shigeru Nishiyama

Tadashi Shimazu

Toshihiko Nishimori

Hidetaka Kafuku

Norio Miyaura

Masatoshi Tanaka

Masahiro Shinya

Yasunori Yamamoto

Kazuyuki Miyake

Hirao Otoshima

Takumi Yamamoto

Syunichiro Yamaguchi

Hiroki Takashima

Toshihito Fujiwara

Shinya Shibata

A composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, Rmay be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; Rmay be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group. 

Composition for chemical vapor deposition film-formation and method for production of low dielectric constant film

On producing a purified borazine compound, a borazine compound is filtrated under an atmospheric condition of a water content of not higher than 2000 volume ppm. Or, on filling a borazine compound into a container, the above described borazine compound is filled into the above described container under an atmospheric condition of a water content of not higher than 2000 volume ppm. Or, as a container for preservation for preserving a borazine compound, a container for preserving a borazine compound, which has withstanding pressure of not lower than 0.1 MPa, is used.

Method for producing a purified borazine compound, method for filling a borazine compound, and container for preserving a borazine compound

An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device. A gas containing a raw material gas which gasified a predetermined alkylborazine compound is supplied in a chamber (); an electromagnetic wave is introduced into the chamber () using with an inductive coupling type plasma generation mechanism () to convert the gas into a plasma; a substrate () is placed in a plasma diffusion region of the plasma; gas-phase polymerization is performed with borazine skeletal molecules, as a fundamental unit, dissociated from the alkylborazine compound by the plasma so as to form the insulating film for semiconductor devices on the substrate ().

Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor device

A double clad fiber includes a core, a first cladding provided so as to cover the core, and a second cladding provided so as to cover the first cladding. The second cladding has a plurality of pores extending in a length direction and arranged so as to surround the first cladding. In at least one fiber end, the second cladding has been removed by mechanical processing so that the at least one fiber end is formed by the core and the first cladding.

Double clad fiber and fiber end processing method, and fiber-combiner connecting structure including the same

A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600&#xb0; C. In the following formula, Rand Rindependently represent alkyl group or acyl group; Rrepresents hydrogen atom or alkyl group; and n represents an integer of 1 to 5. 

Composition for low dielectric material, low dielectric material and method for production thereof

In a synthesis of a borazine compound by a reaction of an alkali boron hydride represented by ABH(A represents lithium atom, sodium atom or potassium atom) and an amine salt represented by (RNH)X (R represents a hydrogen atom or an alkyl group, X represents a sulfate group or a halogen atom, and n is 1 or 2), or b) diborane (BH) and an amine represented by RNH(R represents a hydrogen atom or an alkyl group), a water content of raw material is controlled below a prescribed value; mixed solvents containing solvents each having a prescribed boiling point are used as a solvent for reaction; or a raw material is gradually fed to a reactor in a reaction. Or, a borazine compound is subjected to distillation purification treatment and filtration treatment. By such a method, a high purity of borazine compound can be produced safely and in a high yield.

Method for producing borazine compound

In synthesis of hexaalkylborazine represented by the chemical formula 2 from a borazine compound represented by the chemical formula 1, a borazine compound represented by the chemical formula 1 is reacted with an alkene compound, in the presence of a catalyst. Wherein Rs may be the same or different and each Rrepresents an alkyl group; and each Rrepresents a hydrogen atom or an alkyl group, and at least one of Rs represents a hydrogen atom; and Rs may be the same or different and each Rrepresents an alkyl group. 

Method for producing hexaalkylborazine

A connection end portion of a PC fiberis fused by heating to provide a sealing portionwhich seals holesof a cladding. Length L of the sealing portionis determined by calculation based on the conditions such as an incident angle &#x3b8; [&#xb0;] of signal lightwith respect to the PC fiber, an outer diameter D [&#x3bc;m] of the fiber, a diameter a [&#x3bc;m] of the core of the fiber and a refractive index n of the sealing portion

Optical transmission device

In the process of synthesizing alkylborazine compound represented by the chemical formula 2, by a reaction of a halogenated borazine compound represented by the chemical formula 1 with a Grignard reagent, thus synthesized alkylborazine compound is washed with water, or subjected to sublimation purification or distillation purification at least three times, and/or subjected to distillation purification at least twice. In the formulas, Rindependently represents alkyl group; Rindependently represents alkyl group; and X represents halogen atom. 

Alkylborazine compound and production method for the same

A three-dimensional weaving machine that enables biased yarn guide blocks to be reduced in size and their movement to be simplified and that reliably feeds biased yarns is described. A three-dimensional mechanism contains 2N guide blocks (13), each including a biased yarn through-hole (15) extending along the length direction. A guide block receiving and supporting device (18) forms guide block arrangement spaces (S1), (S2), and (S3) in a bottom stage, a middle stage, and a top stage wherein N of the 2N guide blocks can be arranged in each stage parallel with, and adjacent to, one another. A guide block moving device (22) is provided for moving the guide blocks in each stage in opposite directions along the respective stages, and a shifting device (44) operates for simultaneously shifting two adjacent sets of guide blocks movably arranged in the respective guide block arrangement spaces, each by one stage.

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Nishinomiya, Japan

Tetsuya Yamamoto