Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Sumco Corporation

Mirise Technologies Corporation

Tetsuya Yamada

Hiroyuki Ueda

Tomohiko Mori

Makoto Nakamura

Ryuji Omata

Daigo Nobe

Takashi Okawa

Yoshimitsu Takahashi

Kiyotaka Matsubara

Hiromichi Kinpara

Masahito Fujieda

Shinjirou Uchida

Masamitsu Fukuda

A method for manufacturing a semiconductor device, includes: forming an alignment mark in a non-element region of a gallium-based compound semiconductor layer; and, after the forming of the alignment mark, forming an element structure in an element region of the gallium-based compound semiconductor layer. The forming of the alignment mark further includes: ion-implanting a metal into a part of a surface layer portion of the non-element region of the gallium-based compound semiconductor layer; and annealing the gallium-based compound semiconductor layer.

Method for manufacturing semiconductor device having gallium-based compound semiconductor layer

A drive system for an electric motor includes a first inverter that includes first switching elements, a second inverter that includes second switching elements, and a control unit that includes a first inverter control calculation section controlling on-off operation of each of the first switching elements based on a first carrier wave and a first modulation wave, a second inverter control calculation section controlling on-off operation of each of the second switching elements based on a second carrier wave and a second modulation wave, and a control synchronization section synchronizing the first carrier wave with the second carrier wave. When a sum of voltages of the first voltage source and the second voltage source is more than a voltage determination threshold, and torque of a rotating electric machine is smaller than a torque determination threshold, the control synchronization section synchronizes the first carrier wave with the second carrier wave.

Drive system for electric motor

A method of manufacturing a silicon on insulator substrate includes: preparing a semiconductor substrate including a rear side semiconductor layer, an insulating layer, and a front side semiconductor layer, a first surface of the insulating layer being in contact with a surface of the rear side semiconductor layer, and a first surface of the front side semiconductor layer being in contact with a second surface of the insulating layer; forming a high concentration region in which an impurity concentration is increased in the front side semiconductor layer, by injecting impurities into the front side semiconductor layer; heating the semiconductor substrate having the high concentration region; and epitaxially growing an additional semiconductor layer on a second surface of the front side semiconductor layer of the heated semiconductor substrate, the additional semiconductor layer having a lower impurity concentration than the high concentration region.

Method of manufacturing silicon on insulator substrate

A switching element includes a semiconductor substrate that includes a first n-type semiconductor layer, a p-type body layer constituted by an epitaxial layer, and a second n-type semiconductor layer separated from the first n-type semiconductor layer by the body layer, a gate insulating film that covers a range across the surface of the first n-type semiconductor layer, the surface of the body layer, and the surface of the second n-type semiconductor layer, and a gate electrode that faces the body layer through the gate insulating film. An interface between the first n-type semiconductor layer and the body layer includes an inclined surface. The inclined surface is inclined such that the depth of the body layer increases as a distance from an end of the body layer increases in a horizontal direction. The inclined surface is disposed below the gate electrode.

Switching element having inclined body layer surfaces

A method of manufacturing a switching element includes forming a recessed portion in a surface of a GaN semiconductor substrate in which a first n-type semiconductor layer is exposed on the surface, growing a p-type body layer within the recessed portion and on the surface of the GaN semiconductor substrate, removing a surface layer portion of the body layer to expose the first n-type semiconductor layer on the surface of the GaN semiconductor substrate, and leave the body layer within the recessed portion, forming a second n-type semiconductor layer which is separated from the first n-type semiconductor layer by the body layer and is exposed on the surface of the GaN semiconductor substrate, and forming a gate electrode which faces the body layer through an insulating film.

Method of manufacturing switching element having gallium nitride substrate

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Seto, Japan

Tetsuya Yamada