Fujifilm Corporation

The University of Tokyo

Fuji Photo Film Company, Limited

Yazaki Corporation

Fuji Xerox Co., Ltd.

Renesas Electronics Corporation

Fujifilm Business Innovation Corp.

Jatco Corporation

Tetsuya Watanabe

Toshihiro Okamoto

Junichi Takeya

Yoshihisa Usami

Eiji Fukuzaki

Hiroaki Tsuyama

Masashi Koyanagi

Yukio Tani

Tetsu Kitamura

Yoshinori Taguchi

Kazuya Oota

Takashi Goto

Suguru Samejima

Fumiko Tamakuni

Junichi Ito

Kimiatsu Nomura

Naotsugu Muro

Masatoshi Yumoto

Yuushi Kaneko

Hisashi Mikoshiba

Yosuke Yamamoto

Hidehiro Mochizuki

Hiroki Sugiura

Tetsuya Matsushita

Takanori Hioki

Toshio Sasaki

Kenji Shirokane

Masaki Okazaki

Motohisa Kashiyama

Hiroo Takizawa

Kousuke Watanabe

Tatsuo Mikami

Jun Ishikawa

Masashi Ogiyama

Taro Hashizume

Shigeru Awano

Koki Nakamura

Naoki Saito

Yushi Kaneko

Tomoyuki Watanabe

Yoshihiko Fujie

Mikio Ihama

Hiroaki Idei

Hirokazu Hashimoto

Hiromi Taguchi

Yasuhiko Kunii

Takumi Nakamura

Kazutoshi Katayama

Nobuhiro Tsuda

Takanori Yamawaki

Yousuke Murakami

Akihiro Hara

Masayuki Harada

Yuta Shigenoi

Shoichi Watai

Junichi Itou

Seiji Hatano

Kenji Matsubara

Taisuke Fujimoto

Tomoyuki Kasajima

Hitoshi Nakata

Tadasuke Takahashi

Masatomi Sen

A first object of the present invention is to provide a method for producing a cyclic imide compound with high yield and high purity. A second object of the present invention is to provide a composition that can be used in the method for producing a cyclic imide compound with high yield and high purity. A third object of the present invention is to provide an intermediate compound that can be used in the method for producing a cyclic imide compound with high yield and high purity. The method for producing a cyclic imide compound according to the present invention includes reacting a compound represented by formula (1) below with at least one amine compound to obtain a compound represented by formula (2) below.

Method for producing cyclic imide compound, composition, and compound

Provided are an organic thin film transistor, an organic semiconductor film, a compound, an organic thin film transistor-forming composition, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes the organic semiconductor film. The organic semiconductor film includes a compound represented by a specific formula. The organic semiconductor film, the compound, and the organic thin film transistor-forming composition can be preferably used in the organic thin film transistor. The method of manufacturing the organic thin film transistor includes a step of forming an organic semiconductor film by applying the organic thin film transistor-forming composition to a substrate.

Organic thin film transistor, organic semiconductor film, compound, organic thin film transistor-forming composition, and method of manufacturing organic thin film transistor

An object of the present invention is to provide a composition capable of manufacturing an organic thin film transistor having excellent carrier mobility even under low temperature conditions. The composition of the present invention contains a compound represented by Formula (1) and an alcohol represented by Formula (S1).

Composition

An information processing apparatus includes a processor configured to perform control for displaying a first screen for receiving a change of setting of processing and an execution instruction of the processing, cause the screen to transition while maintaining first setting that is setting changed on the first screen, and perform notification that the first setting is changed upon receiving the execution instruction of the processing is received on the first screen in a case where a transition from the first screen to a second screen for receiving a change of second setting related to the processing or from the first screen to the second screen for receiving processing different from the processing received on the first screen is made during a period from the change of the first setting to reception of the execution instruction of the processing received on the first screen.

Information processing apparatus and non-transitory computer readable medium storing information processing program

An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1) and/or a compound of Formula (2) or the organic semiconductor layer contains a polymer having a structure of any one of Formulae (6) to (8):  in which Rings A and B each represent an aromatic 5-membered ring, X represents a nitrogen atom or CR, and Rrepresents a hydrogen atom or a substituent; E represents an oxygen atom or a sulfur atom; Rto Reach represent a specific substituent; and p, q, r, and s each are an integer of 0 to 2; n is 1 or 2; and * represents a bonding site.

Organic semiconductor element, organic semiconductor composition, method of manufacturing organic semiconductor film, organic semiconductor film, and compound and polymer using the same

An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1), a compound of Formula (2), and/or a compound of Formula (3) or contains a polymer having a structure of any one of formed by Formulae (8) to (10):  in which Xrepresents a nitrogen atom or CR, and rings A to B each represent a specific nitrogen-containing ring; Yrepresents an oxygen atom, a sulfur atom, CR, or NR; Vrepresents NR, an oxygen atom, a sulfur atom, or a selenium atom; Rto Reach represent a hydrogen atom or a substituent; Rrepresents a specific substituent, and p is an integer of 0 to 2; n represents 1 or 2; and * represents a bonding site.

Provided are an organic semiconductor element including an organic semiconductor film that includes a polymer having a repeating unit represented by the following Formula (1), the polymer, and an organic semiconductor composition and an organic semiconductor film including the polymer.  In the formula, Yrepresents O, S, or Se. Rto Reach independently represent a substituent. a and b each independently represent an integer of 0 to 3, and r and s each independently represent an integer of 0 to 2. Arepresents an aromatic heterocyclic group. mrepresents an integer of 1 to 12.

Organic semiconductor element, polymer, organic semiconductor composition, and organic semiconductor film

Provided are an organic thin film transistor element comprising an organic semiconductor layer containing a specific polymer which has a repeating unit including a structure represented by a specific formula, an organic semiconductor film suitable as the organic semiconductor layer and a method of manufacturing the same, and a polymer and a composition suitable as a constituent material of the organic semiconductor film.

Organic semiconductor element, organic semiconductor composition, organic semiconductor film, method of manufacturing organic semiconductor film, and polymer using the same

An information processing apparatus includes a display control unit that, when an operation is performed on one or more other setting items related to a specific non-display setting item, performs control to changeably display a setting value of the specific setting item.

Information processing apparatus and non-transitory computer readable medium for changeably displaying a setting value of a specific setting item set to non-display

Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. In the organic semiconductor film, the formation or propagation of cracks can be effectively suppressed even in a case where the organic semiconductor film is patterned or is exposed to high heat. Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. The microcrystalline organic semiconductor film includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower and in which a crystal domain size is 1 nm to 100 nm.  X, Y, and Z each independently represent a specific ring-constituting atom. Rand Reach independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. Rand Reach independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n each independently represent an integer of 0 to 2.

Microcrystalline organic semiconductor film, organic semiconductor transistor, and method of manufacturing organic semiconductor transistor

Provided are an organic semiconductor element including an organic semiconductor film that includes a polymer having a repeating unit represented by the following Formula (1), the polymer, and an organic semiconductor composition and an organic semiconductor film including the polymer.  In the formula, Z represent a 5-membered aromatic heterocycle. Rand Reach independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aromatic hydrocarbon group, or an aromatic heterocyclic group. nand neach independently represent 0 or 1. Rto Reach independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aromatic hydrocarbon group, or an aromatic heterocyclic group.

A compound which, when used for organic semiconductor films in organic thin-film transistors, makes the organic thin-film transistors exhibit a high carrier mobility, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, an organic thin-film transistor and a method for manufacturing the same, and an organic semiconductor film. The organic thin-film transistor contains a compound represented by General Formula (1) in an organic semiconductor film (organic semiconductor layer) thereof. 

Organic thin-film transistor and method for manufacturing the same, material for organic thin-film transistor, composition for organic thin-film transistor, compound, and organic semiconductor film

An object of the present invention is to provide an organic thin-film transistor which has an organic semiconductor film produced using a compound having an excellent solubility in organic solvents and has an excellent carrier mobility, a compound, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, a method for manufacturing an organic thin-film transistor, and an organic semiconductor film. An organic thin-film transistor of the present invention contains a compound which is represented by General Formula (1) or General Formula (2) in an organic semiconductor film (organic semiconductor layer) thereof and has a molecular weight of 3,000 or less.  In General Formula (1) and General Formula (2), at least one of R, . . . , or Ris a group other than a hydrogen atom.

Growing community of inventors

Kanagawa, Japan

Tetsuya Watanabe