Tdk Corporation

Tetsuya Uemura

Katsuyuki Nakada

Kazuumi Inubushi

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):CoFeX  (1)(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α<β, and 0.5≤α<1.9).

Magnetoresistance effect element and Heusler alloy

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):CoFeX&#x2003;&#x2003;(1)(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and &#x3b1; and &#x3b2; represent numbers that satisfy 2.3&#x2264;&#x3b1;+&#x3b2;, &#x3b1;&#x3c;&#x3b2;, and 0.5&#x3c;&#x3b1;&#x3c;1.9).

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Hokkaido, Japan

Tetsuya Uemura