Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Mitsubushi Denki Kabushiki Kaisha

Tetsuya Ueda

Haruo Shimamoto

Jun Shibata

Toshinobu Banjo

Hiroshi Seki

Yasuhiro Teraoka

Shigeo Onoda

Toru Tachikawa

Hideya Yagoura

Yoshihiro Yamaguchi

Shinji Baba

Seiji Oka

Kazunari Michii

Hidenori Ishibashi

Ken Sakamoto

Hiroki Shiota

Yasushi Kasatani

Seiji Takemura

Yukinobu Tarui

Hironobu Shibata

Masataka Takehara

Kou Shimomura

Osamu Nakagawa

Hiroshi Yoshida

Takaaki Shirasawa

Naoto Ueda

Hideyuki Ichiyama

Keitaro Ichikawa

Yuki Yoshioka

Yomiyuki Yama

Kenichi Suga

Kisamitsu Ono

Osami Nakagawa

Takahiko Anan

Yutaka Koyama

Atsushi Yamatake

Shigeyuki Nango

Kazuki Sameshima

A cavity is formed in a surface of a dielectric component on the permanent magnet side. The cavity has a bottom surface extending in a direction along one main surface and a side surface extending in a thickness direction crossing the bottom surface. At least a part of the permanent magnet is disposed in the cavity. A surface of at least a part of the permanent magnet disposed in the cavity is fixed to both of the bottom surface and the side surface through an adhesive.

Nonreciprocal circuit element and method of manufacturing the same

An insulating substrate inspecting method includes bringing a lower electrode into contact with lower metal of an insulating substrate including an insulating layer, the lower metal in contact with a lower surface of the insulating layer, and upper metal in contact with an upper surface of the insulating layer, and bringing an upper electrode into contact with the upper metal, and applying an AC voltage to the lower electrode and the upper electrode to detect electromagnetic waves generated at a defect in the insulating layer.

Insulating substrate inspecting method and inspecting apparatus

In a non-reciprocal circuit element, a permanent magnet is connected to one main surface of a magnetic plate, and a circuit board is connected to the other main surface of the magnetic plate, with a solder bump lying between the circuit board and the other main surface. The permanent magnet can control the transmission of electrical signal from each of a plurality of signal conductors of circuit board to a corresponding one of a plurality of input/output terminals of the magnetic plate. The non-reciprocal circuit element further includes an underfill material arranged between the magnetic plate and the circuit board. The magnetic plate has a through hole formed therein, the through hole extending from one main surface to the other main surface. The through hole has an empty space in which at least a part of a conductive film arranged in the through hole is exposed.

Non-reciprocal circuit element and method for manufacturing the same

An object is to provide a technology that reduces the number of components and that is capable of suppressing the cost. A structure including semiconductor elements, a plurality of electrode terminals, and a dam bar for connecting the plurality of electrode terminals is prepared, and a part of the structure including a part of the plurality of electrode terminals and the dam bar is arranged in the terminal hole. Further, the part of the structure is clamped by a movable clamp inside the terminal hole, and at least a portion of the movable clamp is fitted into the terminal hole, and then a resin is injected into an internal space of a pair of molds.

Manufacturing method for semiconductor device

Provided is a chip mounter, an electronic circuit substrate, and a power module, where the chip mounter prevents foreign substances from a chip-mounter installation environment, dust generated from members, and dust generated from the chip mounter, thereby preventing failures caused by the foreign substances. The chip mounter takes out a chip component accommodated in a packing tape. The packing tape has a pocket. The pocket has a bottom surface provided with a through hole. The chip mounter includes a tape travelling rail, a sucking-and-mounting arm, and a cavity cleaning mechanism. The cavity cleaning mechanism includes an intake hole disposed upstream of a suction point, in a location of the tape travelling rail, on which the carrier tape with a cover tape attached thereto travels so as to overlap the through hole. The cavity cleaning mechanism takes in the inside of the pocket through the intake hole and the through hole.

Chip mounter, electronic circuit substrate, and power module

A lead frame includes a plurality of circuit patterns which each have a die pad and an electrode terminal portion and are disposed in a band shape, a tie bar, a frame portion and a suspension lead. Cut are a connection portion between electrode terminals and the frame portion, a connection portion between the frame portion and the tie bar at both end portions in a disposition direction of circuit patterns, and a connection portion from a connection part of the frame portion with the tie bar, between the circuit patterns to a part of the frame portion extending in the disposition direction. The electrode terminal portion is bent to extend to a direction of an upper surface of a semiconductor element. The lead frame is collectively resin-sealed while exposing the tie bar and the electrode terminal portion above the tie bar.

Semiconductor device and manufacturing method thereof

A semiconductor device with improved heat radiation and improved insulation performance. The semiconductor device includes a semiconductor element, a lead frame bonded on one surface to the semiconductor element, a first insulating layer disposed on the other surface of the lead frame, and a metal base plate connected to the lead frame with the first insulating layer interposed between them, wherein an outer peripheral portion of the first insulating layer is inside an outer peripheral portion of the metal base plate, and the outer peripheral portion of the first insulating layer is covered with a second insulating layer having higher moisture resistance and higher insulation performance than the first insulating layer, the outer peripheral portion including an electric field concentrated point in an outer peripheral portion of the lead frame.

Heat radiation structure for semiconductor device

A semiconductor device includes a base plate having one main surface joined to an insulating substrate on which a semiconductor chip and the like are mounted and a transfer mold resin which is so provided as to cover the one main surface of the base plate, the insulating substrate, the semiconductor chip, and the like and expose the other main surface of the base plate. The coefficient of linear expansion of the base plate is lower than that of copper and the coefficient of linear expansion of the transfer mold resin is not higher than 16 ppm/&#xb0; C. The transfer mold resin has such scooped shapes as to expose opposed short-side centers and the vicinity of the base plate, respectively. The base plate has mounting holes in portions exposed by the scooped shapes of the transfer mold resin.

Semiconductor device

A power semiconductor device has the power semiconductor elements having back surfaces bonded to wiring patterns and surface electrodes, cylindrical communication parts having bottom surfaces bonded on the surface electrodes of the power semiconductor elements and/or on the wiring patterns, a transfer mold resin having concave parts which expose the upper surfaces of the communication parts and cover the insulating layer, the wiring patterns, and the power semiconductor elements. External terminals have one ends inserted in the upper surfaces of the communication parts and the other ends guided upward, and at least one external terminal has, between both end parts, a bent area which is bent in an L shape and is embedded in the concave part of the transfer mold resin.

Power semiconductor device

A resin sealed semiconductor device includes a first semiconductor switching device having a first emitter terminal and a first collector terminal bonded to its top and bottom surfaces respectively, a second semiconductor switching device having a second emitter terminal and a second collector terminal bonded to its top and bottom surfaces respectively, a first heat sink directly or indirectly bonded to the first collector terminal, a second heat sink directly or indirectly bonded to the second collector terminal, and a molding resin integrally covering the first and second semiconductor switching devices. The first and second heat sinks are exposed from the molding resin. The first emitter terminal faces and is spaced apart from the second emitter terminal.

Resin sealed semiconductor device and manufacturing method therefor

A semiconductor device includes an encapsulating resin encapsulating a semiconductor substrate, a lead pattern or a laminated wiring layers transferred or secured on the lower surface of the encapsulating resin and a plurality of external electrode disposed on the lower surface of the lead pattern. The device may be manufactured by bonding a semiconductor substrate to a transferring substrate on which a lead pattern is formed, resin encapsulating an upper portion of the transferring substrate to cover the semiconductor substrate, and removing only the transferring substrate with the lead pattern left bonded to the encapsulating resin and the semiconductor substrate.

Method of manufacturing semiconductor device

A semiconductor device includes an encapsulating resin encapsulating a semiconductor substrate, a lead pattern or a laminated wiring layers transferred or secured on the lower surface of the encapsulating resin and a plurality of external electrode disposed on the lower surface of the lead pattern. The device may be manufactured by bonding a semiconductor substrate on a transferring substrate to which a lead pattern is formed, resin encapsulating an upper portion of the transferring substrate to cover the semiconductor substrate, and removing only the transferring substrate with the lead pattern left bonded to the encapsulating resin and the semiconductor substrate.

Substrateless resin encapsulated semiconductor device

A semiconductor device comprising a substrate having a hollow cavity for mounting a semiconductor element therein and a lowered step surface at a periphery of the cavity for mounting a chip component thereon. A semiconductor element is mounted within the cavity and a chip capacitor is mounted to the lowered step surface. The semiconductor element and the chip component are adapted to be connected to an external circuit through electrical conductors. A cap is attached to the substrate and a seal material is filled into a space defined between the cap and the substrate for sealing the cavity and for encapsulating the chip component on the lowered step surface which may extend along the entire periphery of the cavity. The cap may include a projection adapted to abut gainst a side wall of the lowered step surface, or alternatively, the lowered step surface may include a side wall having a projection adapted to abut against periphery of the cap. The semiconductor device may further comprise a heat sink attached to the semiconductor element.

A semiconductor device in a vertical surface mount package, reduced in size and having a higher heat radiating capacity, a method of producing the semiconductor device, and a semiconductor module. Leads of a first lead frame and leads of a second lead frame are parallel to each other and at least a portion of the leads overlap leads of the other lead frame when geometrically projected on them. An inner lead may extend out from the semiconductor package or the back side of a die pad in the semiconductor package may be exposed. The invention allows more outer leads to be used and makes it possible to reduce the size of the semiconductor device and to achieve high density mounting.

Semiconductor device and module

In a method of manufacturing a semiconductor device, overlaid on a first lead frame including a die pad supported by a plurality of die pad suspending leads is a second lead frame having connecting leads wherein the first and second lead frames are disposed on a first molding die such that the die pad and inner lead portions of the inner leads of the second lead frame are accommodated within a first cavity of the first molding die while offset portions of the die pad suspending leads are disposed outside of the first cavity. A second molding die is clamped onto the first molding die to define a resin molding chamber which is then filled with a molten resin to form a package. After removing the package from the first and second molding dies, the offset portions are cut away from the package while cutting the connecting leads to a predetermined length. A semiconductor chip as large as permissible can be embedded within a semiconductor device of a standard size while ensuring high quality and improved reliability of the semiconductor device.

Growing community of inventors

Itami, Japan

Tetsuya Ueda