Mitsubishi Denki Kabushiki Kaisha

Tetsuya Uchida

Masato Fujinaga

A method of predicting the topography of a semiconductor workpiece after a plurality of manufacturing processes, such as etching and film deposition, are carried out on the workpiece includes establishing a desired topography for a semiconductor workpiece after sequential performance of a plurality of processes, such as etching, are carried out on the workpiece; specifying conditions, such as temperature and etchant concentration, for each process; establishing a plurality of points in a grid in a space including the workpiece; identifying the materials comprising the workpiece and the concentration of virtual particles representing the topography of the workpiece before a first process; using the modified diffusion model equation to predict the material and concentration of virtual particles after the completion of the first process in the sequence of processes; recording the material and virtual particle concentration at the completion of the first process as a decimal number including an integer part representing the material and a decimal part representing the concentration of virtual particles; and using the modified diffusion model to predict the materials and concentration of virtual particles after a second process beginning with the materials and virtual particle concentrations from the prediction of the first process.

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Itami, Japan

Tetsuya Uchida