Matsushita Electric Industrial Co., Ltd.

Tetsuya Tokunaga

Takahiro Yonezawa

Tatsuo Sasaoka

Hiroyuki Kiyomura

Satoshi Horie

Akihiro Yamamoto

Masahiko Hashimoto

In a bump bonding technique for forming a bump on an IC, including forming a ball at the tip of a gold wire protruding from a capillary, and providing a metal-to-metal joint by applying ultrasonic vibration from a ultrasonic head through the capillary while pressing the ball against a pad portion on the IC, the metal-to-metal joint is provided by applying the ultrasonic vibration at a frequency in a range of 130 to 320 kHz, more preferably in a range of 170 to 270 kHz, and most preferably at a frequency of 230&#xb1;10 kHz at room temperatures and atmospheric pressure. Consequently, a bump is formed on an IC having a low heat resistance temperature in a satisfactory joint condition, and a bump is formed with good positional accuracy without giving the influence of heat to the surroundings.

Bump bonding method apparatus

A carrier tool having a protective ring with a sheet extended over an underside of the ring is used, a semiconductor wafer is made to adhere to the sheet, the semiconductor wafer, being surrounded by the protective ring, is carried from a container device to a bonding stage. Bonding is performed on the bonding stage, and the wafer is carried out to another container device, consequently damage of the wafer is avoided.

Bonding method and apparatus

A bare chip mounting method includes: a dicing step for dividing a semiconductor wafer into individual IC chips while the semiconductor wafer is being attached to a carrier; a washing step for washing the diced semiconductor wafer; a bump-bonding for carrying the washed semiconductor wafer to an assembly process while the semiconductor wafer is being attached to the carrier so as to form a bump on an electrode pad of the wafer; and a mounting step for mounting each of the IC chips, on which the bump is formed, onto a circuit formation body.

Bare chip mounting method and bare chip mounting system

A higher speed moving device moves a capillary at high speed. A low inertial moving and pressing device moves and presses the capillary with low inertia. The high speed motion, and the moving and pressing motion with the low inertia are carried out independently of each other. Thus, an inertia at the low inertial moving and pressing device is reduced, whereby an impact force when a melt ball is driven by the low inertial moving and pressing device into contact with an electrode of a semiconductor integrated circuit is restricted, thus enabling stable formation for minute bumps. On the other hand, operations other than pressing the melt ball to the electrode and joining the melt ball are conducted by driving the capillary by the higher speed moving device, so that productivity is improved.

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Takatsuki, Japan

Tetsuya Tokunaga