Central Glass Company, Limited

Other

Tetsuya Tamura

Mitsuya Ohashi

Isamu Mouri

Tadayuki Kawashima

Tatsuo Hatano

Isamu Mori

Masahiko Matsudo

Ryota Esaki

Tsutomu Nishizaki

A garnet-type oxide sintered body according to the present invention includes crystal grains composed of a garnet-type oxide containing Li, La and Zr and a grain boundary composition containing boron and silicon and filling gaps between the crystal grains. The oxide sintered body has the characteristics of high density and high ion conductivity. A production method of the sintered body includes a step of providing a precursor material by mixing a garnet-type oxide powder containing Li, La and Zr with a sintering aid; a step of forming the precursor material into a formed body; and a sintering step of sintering the formed body. The sintering aid contains oxygen, boron, silicon and lithium. The oxygen and boron, or the oxygen and silicon, contained in the sintered aid form a compound.

Garnet-type oxide sintered body and method for producing same

Disclosed is a process for producing a fluorine-containing complex salt, characterized by that, on a reaction mother liquor containing a plurality of cation species and a fluoroanion in a state that they have been dissolved in a solvent, a trigger for accelerating decomposition of the fluoroanion is allowed to act, thereby precipitating a complex salt containing a plurality of cation species and fluorine, as a solid, from the reaction mother liquor. According to this process, it is possible to produce a monodispersed fluorine-containing complex salt with uniform particle size and shape.

Process for producing fluorine-containing combined salt

The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1-100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas. This method includes the step (a) bringing the gas into contact with the deposit, thereby to remove the deposit by a gas-solid reaction.

Gas for removing deposit and removal method using same

The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1&#x2013;100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas. This method includes the step (a) bringing the gas into contact with the deposit, thereby to remove the deposit by a gas-solid reaction.

A cleaning gas includes HF gas whose concentration is greater than or equal to 1 vol % and oxygen containing gas whose concentration ranges from 0.5 to 99 vol %. The oxygen containing gas includes at least one of O gas, O gas, N O gas, NO gas, CO gas and CO gas. The cleaning gas is employed to remove a deposited material generated in a vacuum treatment apparatus for producing a thin film of at least one of Ti, W, Ta, Ru, Ir, a compound thereof and an alloy thereof.

Cleaning gas and method for cleaning vacuum treatment apparatus by flowing the cleaning gas

A cleaning gas which is employed to remove an unnecessary deposited material formed in a thin film forming apparatus by thermal decomposition of pentaethoxytantalum or tetraethoxysilane without damaging a reactor, tools, parts and piping of a silicon oxide film-forming apparatus or a tantalum oxide film-forming apparatus. The cleaning gas comprises HF gas and at least one of an oxygen-containing gas, a fluorine gas, a chlorine fluoride gas, a bromine fluoride gas and an iodine fluoride gas.

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Saitama, Japan

Tetsuya Tamura