Toyoda Gosei Co., Ltd.

Toyota Gosei Co., Ltd.

Tetsuya Taki

Toshiya Uemura

Koji Okuno

Makoto Asai

Masao Kamiya

Naoki Nakajo

Masato Aoki

Katsuhisa Sawazaki

Kazuki Nishijima

Yusuke Toyoda

Naoki Kaneyama

Mitsuhisa Narukawa

Shuhei Yamada

A group III nitride semiconductor light emitting element, comprising having a light emitting layer with a multiquantum well structure formed of a group III nitride semiconductor. The light emitting layer has plural well layers, and the plural well layers are formed to coincide in emission wavelength with each other.

Group III intride semiconductor light emitting element

A Group III nitride-based compound semiconductor light-emitting device having a quantum well structure, includes a well layer, a first layer formed on one surface of the well layer, a second layer formed on the other surface of the well layer, a first region provided in the vicinity of the interface between the first layer and the well layer, and a second region provided in the vicinity of the interface between the second layer and the well layer. A composition of the first and second regions gradually changes such that the lattice constants of the first and second layers approach the lattice constant of the well layer as a position approaches said well layer.

Group III nitride-based compound semiconductor light-emitting device and method for producing the same

In a Group III nitride compound semiconductor light-emitting device which outputs lights from a semiconductor plane, about 1.5 &#x3bc;m in height of a Group III nitride compound semiconductor projection part, which is made of Mg-doped p-type GaN having Mg doping concentration of 8&#xd7;10/cmand is formed through selective growth, is formed on a p-type contact layer (second p-layer). And a light-transparency electrodeis formed thereon through metal deposition. The Group III nitride compound semiconductor projection partmakes a rugged surface for outputting lights and actual critical angle is widened, which enables to improve luminous outputting efficiency. And because etching is not employed to form the ruggedness, driving voltage does not increase.

Group III nitride compound semiconductor light-emitting device and method for producing the same

A GaN based semiconductor light emitting device has: an active layer disposed between an n-type layer and a p-type layer; and a polycrystalline nitride based semiconductor uneven layer disposed between the n-type layer and the active layer. The active layer is formed uneven according to the uneven form of the polycrystalline nitride based semiconductor uneven layer.

GaN based semiconductor light emitting device and method of making the same

A second Group III nitride compound semiconductor layer not doped with any impurities or doped with n-type impurities or with n-type and p-type impurities is formed on a first Group III nitride compound semiconductor layer doped with p-type impurities. Resistance is reduced by a heat treatment after or during the formation of the second Group III nitride compound semiconductor layer.

Method for producing p-type group III nitride compound semiconductor

After one of layers constituting a superlattice structure is formed by an MOCVD method, NHgas is circulated together with Hgas as a carrier gas to thereby perform a purge step. After the purge step, a next layer is formed.

Group III nitride compound semiconductor device having a superlattice structure

In a light-emitting element in which an n-type layer of a Group III nitride compound semiconductor, a light-emitting layer of a Group III nitride compound semiconductor and a p-type layer of a Group III nitride compound semiconductor are laminated successively on a substrate, a semiconductor layer of ZnCdSSe(0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1) which receives a part of blue light from the light-emitting layer to thereby emit yellow light, is interposed between the n-type Group III nitride compound semiconductor layer and the light-emitting layer.

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Aichi-ken, Japan

Tetsuya Taki