Osram Opto Semiconductors Gmbh

Tetsuya Taki

Matthias Peter

Joachim Hertkorn

Tobias Meyer

Rainer Butendeich

Alexander Walter

Juergen Off

Berthold Hahn

Karl Engl

Johannes Baur

Volker Haerle

Hubert Maiwald

Jürgen Off

Matthias Sabathil

Lutz Höppel

Martin Strassburg

Andreas Biebersdorf

Hans-Jürgen Lugauer

Ulrich Zehnder

Nikolaus Gmeinwieser

Andreas Leber

Thomas Bauer

Ansgar Laubsch

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Optoelectronic semiconductor chip and method for fabrication thereof

A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Light-emitting semiconductor chip

A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.

Composite substrate, semiconductor chip having a composite substrate and method for producing composite substrates and semiconductor chips

An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

A light-emitting device is specified, said device comprising: a light-emitting semiconductor element () which emits greenish white light () during operation of the device, a filter element () which has a higher optical transmittance () in a spectral region of red light than in a spectral region of blue and green light, wherein the filter element () is arranged in such a way with respect to the light-emitting semiconductor element () that solely filtered light () which passes through the filter element () is emitted by the device during operation of the device, and the filtered light () is warm-white light.

Light-emitting device

A method for producing an optoelectronic component is provided. A transfer layer, containing InGaN with 0&#x3c;x&#x3c;1, is grown onto a growth substrate. Subsequently, ions are implanted into the transfer layer to form a separation zone, a carrier substrate is applied, and the transfer layer is separated by way of heat treatment. A further transfer layer, containing InGaN with 0&#x3c;y&#x2266;1 and y&#x3e;x, is grown onto the previously grown transfer layer, ions are implanted into the further transfer layer to form a separation zone, a further carrier substrate is applied, and the further transfer layer is separated by way of heat treatment. Subsequently, a semiconductor layer sequence, containing an active layer, is grown onto the surface of the further transfer layer facing away from the further carrier substrate.

Method for producing an optoelectronic component

A method can be used for producing a semiconductor layer sequence, which is based on a nitride compound semiconductor material and which comprises a microstructured outer surface. The method has the following steps: A) growing at least one first semiconductor layer of the semiconductor layer sequence on a substrate; B) applying an etch-resistant layer on the first semiconductor layer; C) growing at least one further semiconductor layer on the layer sequence obtained in step B); D) separating the semiconductor layer sequence from the substrate, a separating zone of the semiconductor layer sequence being at least partly removed; E) etching the obtained separating surface of the semiconductor layer sequence by an etching means such that a microstructuring of the first semiconductor layer is carried out and the microstructured outer surface is formed.

Method for producing a semiconductor layer sequence, radiation-emitting semiconductor chip and optoelectronic component

An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

An optoelectronic semiconductor component comprising a semiconductor layer sequence () based on a nitride compound semiconductor and containing an n-doped region (), a p-doped region () and an active zone () arranged between the n-doped region () and the p-doped region () is specified. The p-doped region () comprises a p-type contact layer () composed of InAlGaN where 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1 and x+y&#x2266;1. The p-type contact layer () adjoins a connection layer () composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer () has first domains () having a Ga-face orientation and second domains () having an N-face orientation at an interface with the connection layer ().

Optoelectronic semiconductor component

An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa1-xN-based intermediate layer where 0&#x3c;x&#x2266;1, which is situated at a same side of the active zone as the n-doped layer sequence.

Optoelectronic semiconductor chip and use of an intermediate layer based on AlGaN

An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm.

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Tokyo, Japan

Tetsuya Taki