Agilent Technologies, Inc.

Meijo University

Stanley Electric Co., Ltd

Lumileds Lighting U.s., LLC

Other

Toyoda Gosei Co., Ltd.

Tokai Rubber Industries, Ltd.

Pioneer Electronic Corporation

Koito Manufacturing Company, Ltd.

Philips Lumileds Lighting Company LLC

Melio University

Tetsuya Takeuchi

Isamu Akasaki

David P Bour

Motoaki Iwaya

Ying-Lan Chang

Norihide Yamada

Hiroshi Amano

Michael R T Tan

Scott W Corzine

Ghulam Hasnain

Satoshi Kamiyama

Michael H Leary

Mark R Hueschen

Kazuyoshi Iida

Michael Ragan Krames

Nathan Fredrick Gardner

Katsuhide Manabe

Werner K Goetz

Stephen Andrew Stockman

Ashish Tandon

Atsushi Watanabe

Takanobu Akagi

Yawara Kaneko

Shinichi Tanaka

Masaru Kuramoto

Michael R Tan

Atsushi Yoshida

Koji Okuno

Richard P Schneider

Ji-Hao Liang

Naoki Yamada

Danny E Mars

Christopher P Kocot

Tetsuji Narasaki

Masaki Oya

Ying-Ian Chang

Hiroki Inagaki

Danielle Russell Chamberlin

Kunihiko Kurisu

Yoshio Taniguchi

Yoshiki Saito

Kazunobu Hashimoto

Seiichiro Kobayashi

Ryo Nakamura

Masaru Takizawa

Kazufumi Tanaka

Shigeru Nakagawa

Kengo Nagata

Naoki Sone

Shinya Boyama

Takeshi Nomura

Sho Iwayama

Shinichi Matsui

Koichi Mizutani

Ryo Minoshima

Junko Kobayashi

Yoshifumi Yamaoka

Setsuro Fujii

Andy Luan

Hiroshi Miwa

Masato Sugiyama

Kazuki Kiyohara

Yoon-Kyu Song

Lu Weifang

Yuka Kuwano

Nobuaki Hayashi

Wu Chifei

Daisuke Komori

Toshiyuki Mihara

Kaku Takarabe

Yawara Kaneki

Nobumoto Chikazawa

Kenji Machii

Teruo Arima

Masataka Inuzuka

Osamu Goto

Hisanori Ishiguro

Masataka Inuduka

Taiji Nishitani

Shingo Hibino

Hisanori Kojima

Kenjo Matsui

Toshiki Yasuda

Hiroyuki Oshita

To suppress current leakage between the semiconductor layer below the mask and the buried layer above the mask. To reduce the drive voltage and improve the emission efficiency by improving the efficiency of carrier injection into the active layer. The semiconductor light-emitting device includes a substrate, a mask, a columnar semiconductor, a buried layer, a cathode electrode, and an anode electrode. The substrate has a conductive substrate, an n-type semiconductor layer disposed on the conductive substrate, and a p-type semiconductor layer disposed on the n-type semiconductor layer. The p-type semiconductor layer has a high resistance, thereby enhancing insulation between the n-type semiconductor layer and the buried layer.

Semiconductor device and method for producing semiconductor device

A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a Natmosphere at not less than 650° C. or in a N+Oatmosphere at not less than 500° C.

Method for manufacturing light-emitting element and method for removing hydrogen from light-emitting element

Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.

Semiconductor light emitting device and manufacturing method of semiconductor light emitting device

Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.

Semiconductor multilayer film reflecting mirror and vertical cavity light-emitting element

A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.

Vertical cavity light-emitting element

To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.

Group III nitride semiconductor light-emitting device and production method therefor

Achieving resistance reduction of a nitride semiconductor multilayer film reflector. In the nitride semiconductor multilayer film reflector, a first semiconductor layer has a higher Al composition than a second semiconductor layer. A first composition-graded layer is interposed between the first and second semiconductor layers so as to be located at a group III element face side of the first semiconductor layer, the first composition-graded layer being adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer. A second composition-graded layer is interposed between the first and second semiconductor layers so as to be located at a nitride face side of the first semiconductor layer. The second composition-graded layer is adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer.

Nitride semiconductor multilayer film reflector and light-emitting device using the same

Provided is a semiconductor multilayer film reflecting mirror formed by alternately repeating a first nitride film containing In (indium) and a second nitride film not containing In. The reflecting mirror includes an inter-film transition layer between the first and second nitride films, the composition of which is varied from the composition of the first nitride film to the composition of the second nitride film. The inter-film transition layer has a first transition layer formed on the first nitride film and containing In and Al (aluminum), and a second transition layer formed on the first transition layer and containing Al but not containing In. In the first transition layer, the percentages of In and Al are decreased from the first nitride film to the second transition layer, and the percentage of In in the first transition layer starts to decrease at a same or closer position to the first nitride film than the percentage of Al.

Semiconductor multilayer film reflecting mirror, vertical cavity light-emitting element using the reflecting mirror, and methods for manufacturing the reflecting mirror and the element

A semiconductor multilayer film mirror is configured such that a pair of an InAlN-based semiconductor film and a GaN-based semiconductor film is layered a plurality of times in a cyclic fashion and the InAlN-based semiconductor film has an In composition of less than 18 at %. The semiconductor multilayer film mirror includes a thin GaN cap layer formed on the InAlN-based semiconductor film and an AlGaN layer formed on the thin GaN cap layer between each pair of the InAlN-based semiconductor film and the GaN-based semiconductor film.

Semiconductor multilayer film mirror, vertical cavity type light-emitting element using the mirror, and methods for manufacturing the mirror and the element

A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.

Nitride semiconductor light-emitting device with periodic gain active layers

This application provides a method of manufacturing an n-p-n nitride-semiconductor light-emitting device which includes a current confinement region (A) using a buried tunnel junction layer and in which a favorable luminous efficacy can be obtained and to provide the n-p-n nitride-semiconductor light-emitting device. The p-type activation of a p-type GaN crystal layer stacked below a tunnel junction layer is performed in an intermediate phase of a manufacturing process in which the p-type GaN crystal layer is exposed to atmosphere gas with the tunnel junction layer partially removed, before the tunnel junction layer is buried in an n-type GaN crystal layer. In the intermediate phase of the manufacturing process in which the p-type GaN crystal layer is exposed, p-type activation is efficiently performed on the p-type GaN crystal layer, and a p-type GaN crystal layer with low electric resistance can be obtained.

Method of manufacturing n-p-n nitride-semiconductor light-emitting device, and n-p-n nitride-semiconductor light-emitting device

A nitride semiconductor light emitting device includes a substrate as a base and an n-type semiconductor layer grown on a surface side of the substrate. Antimony (Sb) is added to the n-type semiconductor layer so that a molar fraction is not less than 0.1% and is less than 1%. A concentration of an n-type impurity in the n-type semiconductor layer is lower than an electron concentration.

Nitride semiconductor light emitting device and method of fabricating the same

An object is to improve a positive hole injection efficiency into an active layer in a nitride semiconductor light-emitting device. The nitride semiconductor light-emitting device is formed by stacking nitride semiconductor crystals each of which contains Al and has a polar or semipolar surface either serving as a growth face. The device includes an active layer (), and first and second composition-graded layers (). The active layer () is interposed between the first and second composition-graded layers (). Each one of the first and second composition-graded layers is composition-graded so that an Al composition value is rendered smaller as each one of the first and second composition-graded layers () comes close to a side where a sum of spontaneous polarization and piezoelectric polarization is negative.

Nitride semiconductor light-emitting device

Disclosed is a method for producing a heat insulating laminate structure having an excellent solar radiation shielding capability as well as an excellent radio wave transparency. The method includes placing a transparent laminate film between two transparent substrates, the transparent laminate film having on at least one side of a transparent polymer film a laminated layer structure in which a metal oxide layer containing an organic component and a metal layer are laminated and grooves having widths of 30 &#x3bc;m or less are formed with dividing the metal layer; bonding the two substrates to each other through the transparent laminate film under application of a pressure; and promoting division of the metal layer in the transparent laminate film by the applied pressure to increase an overall surface resistance.

Method for producing heat insulating laminate structure, heat insulating laminate structure, and transparent laminate film for the same

A transparent laminate film which has visible light transmittance, sunlight blocking properties, radio wave transmittance and good appearance is provided. A transparent laminate film includes a laminate structure formed on at least one side of a transparent polymer film, in which a metal oxide layer and a metal layer are laminated, the metal oxide layer containing an organic component, wherein grooves having a width of 30 &#x3bc;m or less are formed in the laminate structure, and an overall surface resistance is 150 &#x3a9;/&#x25a1; or more. Preferably, the grooves are numerous cracks, or are formed by laser processing. Further, preferably, the transparent polymer film has an easy adhesion layer formed on at least one side thereof, and the laminate structure is formed on top of the easy adhesion layer. Furthermore, preferably, the metal oxide layer containing the organic component is formed by a sol-gel method using optical energy during sol-gel curing.

Transparent laminate film and method for producing same

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Nagoya, Japan

Tetsuya Takeuchi