Other

Tetsuya Takagaki

Akira Sekiya

Toshiro Yamada

Kuniaki Goto

Shinsuke Morikawa

Yasuhisa Furutaka

Masami Iwasaki

Yasuo Hibino

Norifumi Ohtsuka

Tsuyoshi Takaichi

Shunichi Yamashita

Disclosed is fluorocarbon-based dry etching gas which is free of global environmental problems and a dry etching method using a plasma gas obtained therefrom. The dry etching gas includes a fluorinated ether of carbon, fluorine, hydrogen and oxygen and having 2-6 carbon atoms.

Dry etching gas

A substrate to be etched is subjected to dry etching by using a dry etching gas containing a perfluorocycloolefin while a plasma with a high density region of at least 10 /cm is generated. As the perfluorocycloolefin, those having 3 to 8 carbon atoms, especially 4 to 6 carbon atoms are preferably used.

Dry etching method

A gaseous composition for dry etching, comprising a perfluorocycloolefin and 1 to 40% by mole, based on the perfluorocycloolefin, of at least one oxygen ingredient selected from oxygen gas and oxygen-containing gaseous compounds. As the perfluorocycloolefin, those having 3 to 8 carbon atoms, especially 4 to 6 carbon atoms, are preferably used.

Gas composition for dry etching and process of dry etching

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Tokyo, Japan

Tetsuya Takagaki