Hamamatsu-photonics K.k.

Tetsuya Taka

Seiichiro Mizuno

Takashi Suzuki

Haruhiro Funakoshi

Yukinobu Sugiyama

Toshiyasu Suyama

Makoto Kono

Keiichi Ota

Ryo Takiguchi

An imaging unit includes a housing having an entrance window that allows radiation transmitted through an object to pass through, a scintillator having an input surface to which radiation passing through the entrance window is input, and a line scan sensor having an imaging surface that captures an image of scintillation light output from the input surface. The imaging unit further includes a slit member placed between the entrance window and the scintillator and configured to guide radiation passing through the entrance window toward the input surface and a 1×lens placed between the scintillator and the line scan sensor and configured to form scintillation light output from the input surface into an image on the imaging surface of the line scan sensor.

Imaging unit, radiological image acquisition system, and radiological image acquisition method

A solid-state imaging device according to the disclosure includes a semiconductor substrate which has a main surface having a plurality of photosensitive regions, and an insulating film which is provided on the main surface of the semiconductor substrate. When the main surface of the semiconductor substrate is taken as a reference surface, a thickness of the insulating film from the reference surface is 0.5 μm or more, a surface (a main surface) of the insulating film on the side opposite to the main surface is a surface having flatness, and a plurality of types of bottom surfaces of which depths from the reference surface are different from each other are provided on the main surface of the semiconductor substrate in the photosensitive regions.

Solid-state imaging device

A solid-state imaging deviceincludes photodiodes PDto PD, charge-voltage converting circuitsto, pre-holding circuitsto, a transimpedance amplifier, a peak holding circuit, and a post-holding circuit. The charge-voltage converting circuitinputs charges generated at the photodiode PDand outputs a voltage value corresponding to the input charge quantity. The pre-holding circuitholds the output voltage value from the charge-voltage converting circuitand outputs the output voltage value as a current. The transimpedance amplifierinputs voltage values successively output form the pre-holding circuitstoas currents and outputs voltage values converted based on a transimpedance from the currents flowing in accordance with change quantities to the input voltage values from a reference voltage value. The peak holding circuitholds and outputs a peak hold voltage of the output voltage values from the transimpedance amplifier

Solid-state imaging device having transimpedance amplifier

A photodetector of a wide dynamic range of incident light amount detection and low temperature dependence is provided. A first signal processing unitincludes an integrating circuit, a first holding circuit, a comparing circuit, a second holding circuit, and a latching circuit. The integrating circuithas a variable capacitor unit that is selectively set to a capacitance value among a plurality of capacitance values, accumulates charges, output from the photodiode, into the variable capacitor unit over an accumulating period that is in accordance with the capacitance value set at the variable capacitor unit, and outputs a voltage Vthat is in accordance with the amount of the accumulated charges. The comparing circuitinputs the voltage Voutput from the integrating circuit, performs a quantitative comparison of the voltage Vwith a reference voltage V, outputs a compared signal Sexpressing the result of comparison, and, when the voltage Voutput from the integrating circuitat the end of an accumulating period is less than the reference voltage V, instructs the first holding circuitto hold the voltage.

Photodetector having wide dynamic range and low temperature dependence

A VI conversion circuitinputs a voltage output from a hold circuit, converts this input voltage to a current based on the resistance value of a resistor R, and outputs this current from a drain terminal of a MOS transistor T. An amp Ahas an adequate open loop gain and MOS transistor Toperates in the saturated region. Here, if the resistance value of resistor Ris R, the current value I that is output from VI conversion circuitis in the proportional relationship expressed by the equation, 'I=V/R,' with respect to the voltage V input into VI conversion circuit.

Signal processing circuit and solid-state image pickup device

A light emitting element driving circuit for supplying driving current I2 to a light emitting elementconnected to one lineof a current mirror circuitis equipped with a pulse generating circuitconnected to the other lineso that pulse current flows therethrough, and superposing meansfor superposing a first auxiliary pulse current on the pulse current in synchronization with the rise-up time of the pulse current. The rise-up time is shortened by the superposition. In the driving circuit, a source follower circuit is connected to the current mirror circuit, and current flowing through the source follower circuit is set to be substantially proportional to current flowing through the other line of the current mirror circuit.

Growing community of inventors

Hamamatsu, Japan

Tetsuya Taka