National Institute of Advanced Industrial Science and Technology

Nec Corporation

Other

Agency of Industrial Science and Technology Ministry of International

The University of Birmingham

Japan As Represented by Director General of Agency of Industrial Science

Japan As Represented by the Secretary of Agency of Industrial Science and Technology

Japan As Represented by Director of Agency of Industrial Science and

Tetsuya Tada

Toshihiko Kanayama

Hidefumi Hiura

Richard Edward Palmer

Alexander Phillip Robinson

Satoru Toguchi

Jon Andrew Preece

Fumiyuki Nihei

Taro Uyeda

Vladimir Pobortchi

Yuichi Hiratsuka

A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layers are located on the same plane.

Semiconductor device using graphene and method of manufacturing the same

A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.

Semiconductor device and method of manufacturing the same

It is to provide a thermodynamically and chemically stable dopant material which can achieve controls of the pn conduction types, carrier density, and threshold value of gate voltage, and a manufacturing method thereof. Further, it is to provide an actually operable semiconductor device such as a transistor with an excellent high-speed operability and high-integration characteristic. Provided is a dopant material obtained by depositing, on a carbon nanotube, a donor with a smaller ionization potential than an intrinsic work function of the carbon nanotube or an acceptor with a larger electron affinity than the intrinsic work function of the carbon nanotube. The ionization potential of the donor in vacuum is desired to be 6.4 eV or less, and the electron affinity of the acceptor in vacuum to be 2.3 eV or more.

Dopant material, dopant material manufacturing method, and semiconductor device using the same

An optical measurement of a crystalline sample to be measured. The sample is irradiated with an exciting light from the polarization direction in which the Raman scattering is prohibited by the selection rule. When a metal probe is brought to proximity to the sample to be measured, the selection rule is eased locally only in the proximity portion near the probe end in order that Raman scattering becomes active. Thus, a Raman signal only from the proximity portion near the probe end is detected. An optical measurement apparatus having an optical arrangement for measuring a signal light re-emitted from a sample to be measured when the sample is irradiated with an exciting light is provided. The optical measurement apparatus comprises a means for limiting the polarization state of the exciting light or signal light and a means for bringing a metal probe near the sample to be measured. The optical measurement apparatus is used to measure the signal light obtained by locally easing the limitation on the polarization state by bringing the metal probe near the sample. Therefore, Raman scattering light from silicon or the like can be measured with high space-resolution exceeding the light diffraction limit.

Optical measurement method and device

The present invention achieves a shallow junction of a source and a drain, and provides a doping method which makes device properties reproducible and a semiconductor device fabricated using the method. In the present invention, doping for the semiconductor is conducted by attaching a molecular species with a higher electron affinity or lower ionization energy out of fullerene derivatives or metallocenes to the semiconductor surface to induce charge transfer from the molecule to the semiconductor.

Doping method and semiconductor device using the same

Disclosed is a microsize driving device in which falling of track proteins from an arrangement of motor protein molecules arranged on a linear track groove provided on a substrate is suppressed and utilization of kinetic energy of track proteins as a driving energy is made possible by controlling the moving direction to a single direction. Namely, provided is a microsize driving device which comprises a substrate, an arrangement of motor protein molecules such as, for example, kinesin molecules deposited on the bottom of a linear track groove provided thereon and track proteins such as, for example, microtubules disposed thereon and is characterized in that the said linear track groove has side surfaces shaped in such a structure as to permit a linear movement of the track proteins moving in a certain specific direction but to inhibit the track proteins moving in the reverse direction thereto causing reversion for the movement in the above mentioned specific direction.

Microsize driving device and method for preparation thereof

A high resolution patterning method of a resist layer is disclosed by patternwise irradiation of a resist layer with electron beam utilizing a polysubstituted triphenylene compound as the electron beam resist material, which is graphitized and made insoluble in both polar and non-polar organic solvents for electron doses greater than 2&times;10 C/cm , and which undergoes cleavage of the adduct chains and extensive de-aromatization of the triphenylene core therefore enhancing the solubility in polar solvents only for electron doses between 3&times;10 and 2&times;10 C/cm . The thus formed positive or negative tone resist layer is highly resistant against dry etching to ensure the utility of the method in fine patterning work for the manufacture of semiconductor devices.

Electron beam resist

A high-resolution patterning method of a resist layer is disclosed by patternwise irradiation of the resist layer with electron beams utilizing a methanofullerene compound as the electron beam resist material, which is graphitized and made insoluble in an organic solvent by the electron beam irradiation in a dose of, for example, 1.times.10.sup.-4 C/cm.sup.2 or larger. The thus formed resist layer is highly resistant against dry etching to ensure utilizability of the method in the fine patterning work for the manufacture of semiconductor devices.

Patterning method utilizing electron beam resist containing

A method of fabricating nanometric structures on a substrate by dry etching includes setting the substrate at a temperature at which condensation of etching gas products of etching gas decomposed, recombined and reacted, or products of reactions between the etching gas and substrate material starts to occur, forming condensates at specific locations on the substrate. The condensates form an etching mask for the dry etching process.

Ultrafine fabrication method

A unique method is proposed for fine patterning of a polymeric resin film on a substrate surface or fine patterning of the substrate surface with the patterned resin film as the resist. The method comprises the steps of: (a) forming a thin film of the resin on the substrate surface; (b) pressing the resin film pattern-wise under a pressure in a specified range by using, for example, a fine needle tip so as to enhance adhesion of the resin molecules to the substrate surface; and (c) dissolving away the resin film with an organic solvent selectively in the areas where the pressure is not applied in step (c) leaving the resin in a pattern-wise area after application of the pressure. The fineness of this patterning can be extremely high to be in the molecular size order.

Growing community of inventors

Tsukuba, Japan

Tetsuya Tada