Hitachi Chemical Company, Ltd.

Tetsuya Sato

Masato Yoshida

Takeshi Nojiri

Mitsunori Iwamuro

Shuichiro Adachi

Yoichi Machii

Kaoru Okaniwa

Keiko Kizawa

Akihiro Orita

Toru Tanaka

Youichi Machii

The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Composition for forming N-type diffusion layer, method of forming N-type diffusion layer, and method of producing photovoltaic cell

The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

Composition for forming P-type diffusion layer, method of forming P-type diffusion layer, and method of producing photovoltaic cell

The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.

Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same

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Tsukuba, Japan

Tetsuya Sato