Tokyo Electron Limited

Toyko Electron Limited

Tetsuya Sada

Kiyohisa Tateyama

Osamu Hirose

Mitsuhiro Sakai

Kiyomitsu Yamaguchi

Takeshi Tsukamoto

Yoichi Honda

Fumio Satou

Kimio Motoda

Tetsu Kawasaki

Yoshitaka Matsuda

Norio Uchihira

Hiroshi Hashimoto

Yuji Shimomura

A cooling device for cooling an object to be processed to a target temperature comprises a plurality of contact members mounted on a placing table, for supporting the object such that the object opposes a top surface of the placing table with an interval, temperature sensors for outputting temperature information of the object supported by the contact members, a first cooling unit for cooling the placing table to a temperature lower than the target temperature to cool the object, a second cooling unit for heating the object cooled by the first cooling unit to a temperature almost equal to the target temperature, and a contrast circuit for performing a switching operation between cooling by the first cooling unit and heating by the second cooling unit on the basis of the temperature information from the temperature sensors.

Cooling device and cooling method

A coating processing apparatus is structured by a rotating cup having an opening portion on the top thereof for housing a substrate, a spin chuck for rotating the substrate in the rotating cup, a lid body having an opening and attached to the rotating cup, a resist solution discharge nozzle for discharging a resist solution onto the substrate through the opening of the lid body, a small lid for blocking up the opening of the lid body, and a protrusion member provided on the underneath surface of the small lid to be positioned inside the rotating cup when the small lid is attached into the opening of the lid body. Thus, adjustment of a film thickness of a coating film after a coating solution is coated can be effectively performed.

Coating processing apparatus

The processing apparatus prevents difficulty in separation of the substrate from the base because of charges on the substrate when the substrate is lifted from the base for substrate placing during processing. The processing apparatus comprises pins to lift up the substrate on the base and a neutralization apparatus to discharge ionized gas to the gap between the bottom of the substrate lifted from the base by the pins and the top of the base. When ionized gas is discharged to the substrate and the base, the charges are neutralized. In addition, the processing apparatus comprises three or more of proximity pins, which form gap between the bottom of the substrate on the base and the top of the base to prevent a frictional electricity being formed therein.

Processing apparatus and a processing method

An apparatus for a treatment is provided, the apparatus comprising a vessel for recovering a treatment liquid flowing out or flying out when the object is treated, cleaning means for cleaning an inner wall surface of the vessel by supplying a cleaning liquid into the vessel, and a circulation system for recovering a discharged liquid discharged from the vessel when the inner wall surface of the vessel is cleaned by the cleaning means and supplying the recovered liquid to the cleaning means.

Method and apparatus for cleaning treatment

A method of processing a substrate for removing a coating film from a substrate by dissolving the coating film with a solvent, comprising the steps of (a) supplying a solvent independently to each of peripheral portions of an upper surface side and a lower surface side of the substrate, and (b) supplying the solvent to the peripheral portion of the lower surface side of the substrate in an amount lower than the solvent supplied to the peripheral portion of the lower surface side in the step (a) or lower than that supplied to the peripheral portion of the upper surface side in this step (b), or terminating a supply of the solvent.

Method and apparatus for processing substrate

Pins that are small protrusions are disposed on the upper surface of a heat process board. Through-holes are formed between the pins so as to deaerate from a space thereof. In a predetermined time period in the initial stage of the heat process, a deaerating process is performed using the through-holes. Thus, a negative pressure is applied to the space between the lower surface of the substrate and the upper surface of the heat process board so as to contact the substrate and the heat process board. Thereafter, the vacuum degree is lowered. Due to the rigidity of the substrate, the substrate and the heat process board are separated. In the initial stage of the heat process, since the substrate and the heat process board directly contact, the temperature of the substrate quickly and equally rises. In addition, when the heat shrinkage is large, since the substrate and the heat process board are separated, static electricity due to friction hardly takes place. Thus, a static breakdown can be prevented. Consequently, a heat process apparatus and a heat process method that allow the entire substrate to be heat-processed are provided.

Heat process apparatus and heat process method

A treatment device comprising a holding method for holding a substrate such as an LCD substrate; and a treatment solution supply method for supplying a treatment solution on a surface of the substrate wherein the holding method has a substrate-placing portion on which the substrate is disposed, the substrate-placing is made of a synthetic resinous material. Since the holding method has a substrate-placing portion which is made of a synthetic resinous material, the electric charge amount of the substrate can be reduced to prevent various static electricity caused troubles such as the electrostatic destruction of the device formed on the substrate. Further, a discharge noise trouble due to discharge phenomenon from the substrate to a transporting method can be prevented. Further, it is possible to reduce the electric charge amount of the holding method and destaticize the holding method by supplying a destaticizing fluid such as ionized pure water or ionized gas towards above or below the holding method. Thus, it is possible to prevent various static-electricity caused troubles such as the electrostatic destruction of the device formed in the device from occurring and further, possible to prevent noise troubles from occurring because the generation degree of the discharge which occurs between the substrate and the transport method can be reduced further. The electric charge amount of the substrate can be reduced by making the thickness (distance) of the substrate-placing portion formed of a dielectric thick (long).

Treatment device

The processing apparatus prevents difficulty in separation of the substrate from the base because of charges on the substrate when the substrate is lifted from the base for substrate placing during processing. The processing apparatus comprises pins to lift up the substrate on the base and a neutralization apparatus to discharge ionized gas to the gap between the bottom of the substrate lifted from the base by the pins and the top of the base. When ionized gas is discharged to the substrate and the base, the charges are neutralized.

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Kumamoto-ken, Japan

Tetsuya Sada