Nikon Corporation

Tetsuya Oshino

Hiroyuki Kondo

Toru Nakamura

Katsuhiko Murakami

Yoshijiro Ushio

Sumito Shimizu

Katsumi Sugisaki

Masaki Yamamoto

Apparatus and methods are disclosed for milling selected regions on the surface of a multilayer-film reflective surface of an X-ray mirror to correct the reflected wavefront produced by the mirror, thereby producing a more uniform or otherwise more desirable phase distribution of the reflected wavefront. The milled multilayer films include multiple lamina sets each including respective layers of at least two respective substances. The layers usually are 'stacked' alternatingly at a fixed period length on a mirror substrate. By selectively removing one or more surficial layers in selected locations, local corrections of the phase shift of the reflective wavefront are achieved. At each milling location, the depth profile can be stepwise or smoothly gradated. Milling methods can include lapping, ion-beam bombardment, plasma-enhanced chemical vapor machining (CVM), reactive-ion etching, photochemical reactions, or laser ablation.

Apparatus and methods for surficial milling of selected regions on surfaces of multilayer-film reflective mirrors as used in X-ray optical systems

Methods and devices are disclosed for holding an optical element in an optical column with reduced stress (e.g., thermal stress) to the optical element. The devices and methods are especially useful for holding reflective optical elements in an optical column of an optical system used for extreme ultraviolet lithography. The devices allow the elements to be mounted and detached readily from the column. In an embodiment, the device includes multiple anchoring members that attach to respective locations on the optical element. The anchoring members are, in turn, mounted in a mounting frame by a releasable attachment mechanism. Each anchoring member has at least a compliant region configured to prevent transmission of stress to and from the optical element.

Devices and methods for holding an optical element with reduced stress in an optical column and while performing an out-of-column procedure on the element

Optical-element mountings are disclosed for holding an optical element relative to an optical column of an optical system. The optical element can have mounting protrusions extending therefrom or lack such features. An exemplary embodiment of a mounting has a respective holding device mounted to each mounting protrusion. Each holding device has a first spring-loaded support member providing rigid support of the element in a gravity direction and flexible support in tangential, radial, and tilt directions. Each holding device also can include a second spring-loaded support member providing rigid support of the element in tangential directions and flexible support in the gravity and radial directions. Another embodiment includes multiple holding devices at respective locations relative to a mounting surface of the element. Each holding device includes a respective linking unit extending from the optical column to a respective bonding member attached to a bonding location on the mounting surface. Each bonding member has a bonding pad bonded to the respective bonding location and at least first and second spring members extending from the bonding pad in respective directions to the linking unit.

Optical-element mountings exhibiting reduced deformation of optical elements held thereby

X-ray projection-exposure apparatus are disclosed that achieve a higher accuracy of pattern overlay than conventionally. An embodiment of such an apparatus includes an X-ray source, an illumination-optical system for irradiating an X-ray beam from the X-ray source onto a mask defining a pattern, a mask stage for holding the mask, a projection-optical system for directing the patterned beam from the mask to project an image of the pattern onto a resist-coated wafer, a wafer stage for holding the wafer, and a mark-position-detection system for detecting the position of a mark formed on the wafer. The center of an exposure-image field of the projection-optical system is located at a position displaced from the center axis of the projection-optical system, and the center axis of the mark-position-detection system is located laterally adjacent the exposure-image field with respect to the center axis of the projection-optical system.

X-ray projection exposure device, X-ray projection exposure method, and semiconductor device

A charged particle beam exposure apparatus mask is provided such that, even if an internal tensile stress is applied to the mask, the amount of deformation of the circuit pattern remains within a range in which the transfer accuracy remains satisfactory. In the case a pattern is placed on a square membrane , when the side length of the square membrane is denoted by L, and the magnitude of the internal tensile stress of the square membrane is denoted by &sgr;(MPa), it has been discovered that the deformation amount of the circuit pattern is proportional to &sgr;&times;L. As a result of a computation, it has been discovered that the relation between the internal tensile stress &sgr;(MPa) and the side length L of the square membrane needs to satisfy &sgr;&times;L&lE;13 in order to keep the position distortion of the circuit pattern less than 28 nm, below which no problem arises in performing an exposure-transfer.

Charged particle beam exposure apparatus mask and charged particle beam exposure apparatus

The present invention relates to projection-exposure apparatus for projecting an accurate pattern defined by a reticle onto a substrate and, more particularly, to exposure apparatus used to transfer a circuit pattern on a mask or reticle through a reflection-type imaging apparatus onto a substrate such as a wafer by the mirror-projection method, for example using an X-ray optical system. The exposure apparatus includes an axial-position (e.g., focal point) detection system. Most or all of the components of the axial-position detection system are enclosed in a vacuum chamber along with the projection-optical system of the exposure apparatus. The axial-position detection system of the exposure apparatus of the present invention accurately measures, for example, the axial height of the surface of a substrate. The substrate surface position may then be adjusted to position the surface in the range of the focal depth of the X-ray projection-optical system. Using the exposure apparatus of the present invention, a resist pattern having the desired resolution is formed on the substrate surface while maintaining a relatively high throughput in the fabrication of integrated circuits.

Apparatus and methods for detecting position of an object along an axis

An X-ray projection exposure apparatus has at least an X-ray source, an X-ray illumination optical system which directs X-rays generated by the X-ray source onto a mask having a prescribed pattern, an X-ray projection focusing optical system which receives X-rays from the mask and projects and focuses an image of the pattern on a substrate. The X-ray projection exposure apparatus further has a mask stage which holds the mask, a substrate stage which holds the substrate, and a position detection optical system which optically detects marks on the mask and substrate. In the X-ray projection exposure apparatus, the projection focusing optical system includes a plurality of reflective mirrors that reflect the X-rays, and at least a portion of the position detection optical system is disposed among the plurality of reflective mirrors.

X-ray projection exposure apparatus with a position detection optical system

The electron beam projection exposure apparatus of the present invention reduces the incidence of defects in patterns formed by exposure on a substrate and includes an illumination optical system for generating an electron beam, a mask placed in a prescribed location including a mask stage for aligning and scanning the mask, a projection-imaging optical system for projecting an image of a pattern formed on the mask onto a substrate with the substrate including a substrate stage for positioning and scanning the substrate. The electron beam projection exposure apparatus further includes at least one filter placed in the proximity of the mask for filtering dust and for preventing dust particles from inhibiting the passage of the electron beam to said substrate.

Electron beam projection exposure apparatus

An X-ray projection exposure apparatus includes a mask stage configured to hold a mask having a predetermined pattern thereon, a substrate stage configured to hold a substrate, and an X-ray source that emits exposing X-rays and detection light having a wavelength different from the exposing X-rays for use in detecting a position of at least one of the mask and the substrate. The apparatus further includes an X-ray illumination optical system configured to direct the exposing X-rays and the detection light towards the mask, an X-ray projection and focusing optical system for receiving the exposing X-rays that have interacted with the mask, and projecting and focusing an image of the predetermined pattern on the mask onto the substrate, and a detector for detecting the detection light that has interacted with the mask to derive the position of the at least one of the mask and the substrate.

X-ray projection exposure apparatus

Apparatus and methods are disclosed for measuring changes in light absorption of a sample optical component. The sample is held in a sample holder in a sample chamber during irradiation by an intense light, usually pulsatile light. Molecules of a gas are introduced into the sample chamber as the sample is irradiated. The molecules can be of a material suspected to become adhered to or absorbed by the sample in a way that causes an undesired change in light absorption by the sample. Changes in light absorption by the sample are preferably measured photoacoustically. The molecules of the gas can be generated by controlled irradiation of a 'source material' with a light (which can be the same as used to irradiate the sample) sufficient to generate such molecules of gas from the source material, and routing the gaseous molecules to the sample as the sample is irradiated.

Light absorption measurement apparatus and methods

An illumination apparatus for illuminating an object with X-rays. The illumination apparatus has a high illumination efficiency, and the numerical aperture of the X-rays is nearly uniform over an arcuate area, and is independent of the illumination position. The apparatus comprises an excitation energy light generation unit for generating excitation energy light rays and a target member having a curved surface and plurality of X-ray sources formed thereon that emit X-rays when irradiated by the light rays. The apparatus further comprises an illumination optical system that images X-rays from said plurality of X-ray sources onto the object to be illuminated. The target member curved surface may be cylindrical. The target member may also be tape-shaped and provided along the curved surface. Further, the target member may be metallic, particulate, liquid or gas.

Illumination apparatus

The present invention relates to an illuminating apparatus for illuminating an illuminated object in an arcuate pattern and, more particularly, to an illuminating apparatus suitably applicable to exposure apparatus suitably used in transferring a circuit pattern on a photomask (mask or reticle) through a reflection type imaging apparatus onto a substrate such as a wafer by the mirror projection method, for example of an X-ray optical system. The illuminating apparatus of the present invention can illuminate the illuminated surface in an arcuate pattern with uniform intensity. Exposure apparatus provided with the illuminating apparatus of the present invention can obtain an image with uniform exposure over the entire arcuate surface as the illuminated surface, so that the pattern on the mask located on the illuminated surface can be accurately transferred with high throughput onto the substrate.

Growing community of inventors

Sagamihara, Japan

Tetsuya Oshino