Fujitsu Corporation

Tetsuya Ogawa

Koichi Kobayashi

Nobuo Toyokura

Makoto Kosugi

Tokushige Hisatsugu

Hikou Shibayama

A method for producing semiconductor devices having a substrate, element fabrication areas formed in the substrate and isolation areas surrounding the element fabrication areas. The method comprises forming a thermal strain absorbing layer on the top surface of the element fabrication areas, forming at least one groove in an area which is to become the isolation areas, inlaying an insulator in the at least one groove, and annealing the insulator to make the density thereof uniform.

Method for production of semiconductor devices

A method and an apparatus for plasma etching semiconductor materials by providing an intermediate electrode between the electrodes in a parallel state type plasma etching apparatus, moving the intermediate electrode by a drive mechanism, and continuously changing from a condition of high input power and high self-bias voltage to a condition of low input power and low self-bias voltage while varying the distance between the intermediate electrode and the first electrode and the RF power, thereby to remove damage or deposits that may have been formed on the surface when the semiconductor material was being subjected to processing.

Growing community of inventors

Machida, Japan

Tetsuya Ogawa