Tokyo Electron Limited

Tetsuya Nishiara

Koichi Yatsuda

Shin Okamoto

Kouichiro Inazawa

An etching gas is supplied into a process chamber and turned into plasma so as to etch a silicon nitride film arranged on a field silicon oxide film on a wafer (w). A mixture gas containing at least CH F gas and O gas is used as the etching gas. Parameters for planar uniformity, by which the etching apparatus is set in light of a set value of the planar uniformity, include the process pressure and the mixture ratio (CH F /O ) of the mixture gas. As the set value of the planar uniformity is more strict, either one of the process pressure and the mixture ratio is set higher.

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Yokohama, Japan

Tetsuya Nishiara