Tokyo Electron Limited

Tetsuya Nakano

Hirokatsu Kobayashi

Masaaki Hasei

Kenji Ishikawa

Masato Koizumi

Qian Shao Shou

Disclosed is a film forming method using a film forming gas composed of a metal alkoxide wherein clean film formation suppressed in contamination of a target substrate to be processed is achieved by restraining aluminum or an aluminum alloy in the processing chamber from dissolving. Specifically disclosed is method for forming a thin film on a target substrate to be processed which is held in a processing chamber, and this method comprises a step for heating the target substrate and a step for supplying a film forming gas into the processing chamber. This method is characterized in that the film forming gas is composed of a metal alkoxide, the processing chamber is made of aluminum or an aluminum alloy, and a protective film composed of a nonporous anodic oxide film is formed on the inner wall surface of the processing chamber.

Film forming apparatus, film forming method, program and storage medium

An ozone-processing apparatus for a semiconductor process system includes an airtight process chamber and a lamp chamber, which are partitioned by a window for transmitting ultraviolet rays. A plurality of ultraviolet-ray lamps is arrayed along the window in the lamp chamber. A measurement space is defined between the window and the lamps in the lamp chamber. The lamp chamber is provided with a mount portion to set up a measuring unit therein. The measuring unit includes a sensor to be inserted into the measuring space, for measuring the light quantity of the lamps. The sensor is movable in a direction in which the lamps are arrayed.

Growing community of inventors

Nirasaki, Japan

Tetsuya Nakano