Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Toa Eiyo Ltd.

Nitto-denko Corporation

Tetsuya Nakamura

Motonari Katsuno

Masayuki Takase

Akio Misaka

Yuji Nonami

Shigeo Irie

Chika Harada

Tomoya Tanaka

Gen Okazaki

Kunihiro Minami

Jun Ishikura

Kazuhiro Aoyagi

Naoko Urushihara

Satoshi Ameyama

Yu Tachikawa

Masao Kataoka

Hisashi Yano

Akira Yokouchi

Yoshitaka Inoue

Naohiro Nishida

Eriko Abe

Shigeru Suzuki

Akira Oodaira

Mai Suzuki

Takeshi Sakuma

Noboru Yoshida

An adhesive preparation containing bisoprolol includes a backing and a pressure-sensitive adhesive layer formed on one side of the backing. The pressure-sensitive adhesive layer contains a polymer prepared through copolymerization of monomer components including a hydroxyl group-containing monomer and an alkyl (meth)acrylate monomer (component (A)), a polymer prepared through copolymerization of monomer components including a methyl methacrylate monomer and a butyl methacrylate monomer (component (B)), and bisoprolol (component (C)).

Adhesive preparation containing bisoprolol

In a pixel unit of a solid-state imaging device, a semiconductor substrate is provided with a plurality of photodiodes, a first insulating film includes a recess in a portion above each of the photodiodes, a second insulating film embeds the recess, a plurality of color filters is formed on the second insulating film, the color filters each corresponding to one of the photodiodes, a partition is provided between adjacent ones of the color filters, the partition being a part of a third insulating film, and in an area outside of the pixel unit, (i) a conductive film at least partially covered by the third insulating film is formed on the second insulating film, and (ii) the third insulating film formed on the conductive film and on the second insulating film near the conductive film has a film thickness smaller than a film thickness of the partition.

Solid-state imaging device and method for manufacturing the same

A solid-state imaging device includes a semiconductor substrate having a plurality of light-receiving portions (PD) formed therein, a wiring layer formed on the semiconductor substrate, color filters formed on the wiring layer in a manner individually corresponding to the light-receiving portions (PD) of the semiconductor substrate, and partition walls each formed between the individual color filters. Each of the partition walls includes a lower layer portion and an upper layer portion, an upper surface of the lower layer portion is modified into a modified layer, and an interface for facilitating reflection of penetration light from outside is structured between the modified layer and the upper layer portion.

A solid-state imaging device and a method for manufacturing the same are provided. The solid-state imaging device includes a structure that provides a high sensitivity and high resolution without variations in spectral sensitivity and without halation of colors, and prevents light from penetrating into an adjacent pixel portion. A plurality of photodiodes are formed inside a semiconductor substrate. A wiring layer includes a laminated structure of an insulating film and a wire and is formed on the semiconductor substrate. A plurality of color filters are formed individually in a manner corresponding to the plurality of photodiodes above the wiring layer. A planarized film and a microlens are sequentially laminated on each of the color filters. In the solid-state imaging device, each of the color filters has an refraction index higher than that of the planarized film and has, in a Z-axis direction, an upper surface in a concave shape.

There is employed a lamination structure of semiconductor substrate in which light receiving part having a photoelectric converting function is formed in an inner portion, and insulating films and wirings. There are provided a wiring layer formed above semiconductor substrate and having a concave portion formed in a place corresponding to a portion disposed above light receiving part, second insulating film having a higher refractive index than insulating films and covering a side surface of the wiring layer facing the concave portion, third insulating film having a lower refractive index than second insulating film and covering the side surface of second insulating film, and fourth insulating film having a higher refractive index than third insulating film and covering the side surface of third insulating film.

Solid-state imaging device

A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.

Photomask and pattern formation method using the same

Growing community of inventors

Osaka, Japan

Tetsuya Nakamura