Sumco Corporation

Kokusai Denshin Denwa Kabushiki Kaisha

Kabushiki Kaisha Toshiba

Kokusai Denshin Denwa Co., Ltd.

Kdd Corporation

Other

Tetsuya Nakai

Yoshinori Mimura

Osamu Shinbori

Yukio Noda

Seiichi Nakamura

Hideharu Tokiwa

Toshio Tani

Takeshi Hamamoto

Yoshiro Aoki

Takashi Yamada

Bong-Gyun Ko

Eiji Kamiyama

Yukio Komatsu

Makoto Saito

Makoto Shinohara

Mimura Yoshinori

Yasuhiko Kawamura

Fumitomo Kawahara

Katsuo Arai

Shunichi Ohno

Tomomi Sudo

This method for manufacturing a SIMOX wafer includes: forming a mask layer on one surface side of a silicon single crystal wafer, which has an opening on a region where a BOX layer is to be formed; implanting oxygen ions through the opening of the mask layer into the silicon single crystal wafer to a predetermined depth, and locally forming an oxygen implantation region; annealing the silicon single crystal wafer with the mask layer, and oxidizing the oxygen implantation region so as to form the BOX layer; and removing a coated oxide film that covers the whole silicon single crystal wafer which is formed in the annealing of the silicon single crystal wafer, wherein the mask layer has a lamination comprising an oxide film and either one or both of a polysilicon film and an amorphous silicon film.

Method for manufacturing SIMOX wafer and SIMOX wafer

A substrate surface serving as an SOI region and a substrate surface serving as a bulk region are made to form the same plane easily and highly accurately, a thickness of a buried oxide film is made uniform, and the buried oxide film is also prevented from being exposed on the substrate surface. After partially forming a mask oxide film () on a surface of a silicon substrate (), an oxygen ions () are implanted into the surface of the substrate through this mask oxide film, and the substrate is further subjected to annealing treatment to form a buried oxide film () inside the substrate. Between the step of forming the mask oxide film and the step of implanting the oxygen ions, a recess portion () with a predetermined depth deeper than a substrate surface () serving as the bulk region where the mask oxide film has been formed is formed in a substrate surface () serving as the SOI region where the mask oxide film is not formed.

Method for manufacturing an SOI substrate

A silicon wafer includes a principal face for forming electronic devices; an end region; and a tapered region which is located between the principal face and the end region, in which the thickness of the silicon wafer is gradually reduced, and which has a slope that makes an angle of greater than zero degree and less than 9.5 degrees or an angle of greater than 19 degrees with the principal face. An SOI wafer prepared by forming a buried oxide layer in a silicon wafer includes a principal face, end region, and tapered region that are substantially the same as those described above. A method for manufacturing an SOI wafer includes the steps of implanting oxygen ions into a silicon wafer; and heat-treating the resulting silicon wafer such that a buried oxide layer is formed in the silicon wafer.

Method for manufacturing SOI wafer

To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface. After partially forming a mask oxide filmon the surface of a substrateconstituted of single crystal silicon, oxygen ionsare implanted into the surface of the substrate through the mask oxide film, and the substrate is annealed to form an buried oxide filminside the substrate. Further included is a step of forming a predetermined-depth concave portiondeeper than substrate surfaceserving as a bulk area on which the mask oxide film is formed on the substrate surfaceserving as an SOI area by forming a thermally grown oxide filmon the substrate surfaceserving as an SOI area on which the mask oxide film is not formed between the step of forming the mask oxide film and the step of implanting oxygen ions.

Method of manufacturing SOI substrate

A SIMOX wafer having a BOX layer with a thin film thickness is obtained without a reduction in productivity or deterioration in quality. In a method for manufacturing a SIMOX wafer comprising: a step of forming a first ion-implanted layer in a silicon wafer; a step of forming a second ion-implanted layer that is in an amorphous state; and a high-temperature heat treatment step of maintaining the wafer in an oxygen contained atmosphere at a temperature that is not lower than 1300&#xb0; C. but less than a silicon melting point for 6 to 36 hours to change the first and the second ion-implanted layers into a BOX layer, a gas containing chlorine that is not less than 0.1 volume % but less than 1.0 volume % is mixed into an atmosphere during temperature elevation in the high-temperature heat treatment.

Method for manufacturing SIMOX wafer

SOI substrate, silicon substrate therefor and it's manufacturing method

A process for manufacturing a silicon-on-insulator substrate comprising a single-crystal silicon substrate in which an oxide layer has been locally buried includes forming a step on the silicon substrate so that a region corresponding to the oxide layer has a greater surface height than other regions; then implanting oxygen ions in the silicon substrate so as to form the oxide layer.

Process for manufacturing silicon-on-insulator substrate

To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface. After partially forming a mask oxide filmon the surface of a substrateconstituted of single crystal silicon, oxygen ionsare implanted into the surface of the substrate through the mask oxide film, and the substrate is annealed to form a buried oxide filminside the substrate. Further included is a step of forming a predetermined-depth concave portiondeeper than substrate surfaceserving as a bulk area on which the mask oxide film is formed on the substrate surfaceserving as an SOI area by forming a thermally grown oxide filmon the substrate surfacea serving as an SOI area on which the mask oxide film is not formed between the step of forming the mask oxide film and the step of implanting oxygen ions.

Method for manufacturing SOI substrate

This method for manufacturing a SIMOX wafer includes: heating a silicon wafer to 300&#xb0; C. or more and implanting oxygen ions so as to form a high oxygen concentration layer within the silicon wafer; subjecting the silicon wafer to a cooling to less than 300&#xb0; C. and an implanting of oxygen ions so as to form an amorphous layer; and subjecting the silicon wafer to a heat-treating in a mixed gas atmosphere containing oxygen so as to form a buried oxide layer. In the forming of the buried oxide layer, a starting temperature is less than 1350&#xb0; C. and a maximum temperature is 1350&#xb0; C. or more. This SIMOX wafer is manufactured by the above method and includes a BOX layer and a SOI layer on the BOX layer. The BOX layer has a thickness of 1300 &#x212b; or more and a breakdown voltage of 7 MV/cm or more, and the surface of the SOI layer and the interface between the SOI layer and the BOX layer have a roughness over a 10-&#x3bc;m square area of 4 &#x212b; rms or less.

Wafer holder

An optical beam diameter reducer for reducing a beam diameter of an optical beam comprises a three-layer structure composed of a central core, a refractive index inclined layer formed outside the core which refractive index gradually decreases toward the outside in the radial direction and a cladding layer formed outside the refractive index inclined layer.

Optical beam diameter reducer

A 1.3 .mu.m-band optical amplifier includes an optical amplifying fiber doped with Yb ion for emitting light in 1.02 .mu.m band by pumping of the 0.98 .mu.m band light and Pr ion for amplifying signal light by pumping of the 1.02 .mu.m band light. Both ends of the optical amplifying fiber are connected to optical fiber gratings for selectively reflecting 1.02 .mu.m band light via matching connecting members and tapered core optical fibers. The optical fiber gratings form a 1.02 .mu.m-band resonator. A Wavelength Division Multiplexing (WDM) optical coupler multiplexes the signal light and pumping light from an pumping laser and supplies the thus-multiplexed light to the optical fiber grating. The pumping laser comprises a laser device which causes laser oscillation at 0.98 .mu.m. A 1.5 .mu.m-band optical amplifier having a similar configuration is also disclosed.

Optical amplifier

A high power laser transmitting fluoride glass fiber of an enhanced 2.94- .mu.m laser damage threshold value is disclosed, in which either of the core with a high refractive index and the cladding with a low refractive index is formed of fluoride glass which contains fluorine (F) as a component but has it substituted with 0 to 4.1 mol % of bromine (Br), chlorine (Cl), or bromine and chlorine. The optical fiber of the present invention may have its core formed of fluoride glass and its cladding formed of fluorine-contained resin, and the core glass has a composition that 70 to 80% of fluorine (F) is substituted with 0 to 4.1 mol % of bromine (Br), or chlorine (Cl), or bromine and chlorine.

Fluoride optical fiber for high power laser transmission

A high-output, single fundamental transverse mode solid state laser is disclosed which uses a semiconductor laser array as an excitation light source. The solid state laser comprises: a laser element which includes a core containing an element added as a laser medium, a cladding containing no such laser medium element, and reflecting mirrors coated over the cladding surface for repeatedly reflecting incident excitation light so that it may repeatedly pass through the core; an excitation light source formed by semi-conductor laser or light emitting diode array; means for guiding the excitation light from the excitation light source to one side of the laser element for incidence thereto; and a resonator for the oscillation of the solid state laser.

Solid state laser

A fusion splicing method for optical fibers in which optical fibers are fusion spliced in an inert gas atmosphere after water adsorbed on their surfaces is removed by decomposition in a plasma of an inert gas containing a halogen.

Growing community of inventors

Tokyo, Japan

Tetsuya Nakai